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氧化鋅鎂化合物半導體之激子特性 = Excitonic properti...

國立高雄大學應用物理學系碩士班

氧化鋅鎂化合物半導體之激子特性 = Excitonic properties of ZnMgO semiconductor alloys

Record Type:	Language materials, printed : monographic
Paralel Title:	Excitonic properties of ZnMgO semiconductor alloys
Author:	陳俊男,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民100
Description:	44葉部份彩圖，表格 : 30公分;
Subject:	光致螢光
Subject:	photoluminescence
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/36988781021249163602
Notes:	參考書目：葉40-42
Summary:	本研究是利用光致螢光光譜技術，來分析氧化鋅鎂的激子特性。首先，我們發現以溶膠-凝膠法製成的氧化鋅鎂粉末(鎂濃度為0.01~0.07)在高溫時，激子-聲子間有很強烈的交互作用，且當粒徑越大時，交互作用越強。經過分析後，激子-聲子交互作用強烈的原因來自表面缺陷，因此我們在樣品表面做一些處理，但無法有效改善。之後，我們改以射頻磁控濺鍍法製作氧化鋅鎂薄膜(鎂濃度大約為0.03)，成功地觀察到激子-激子散射光譜，並研究溫度對激子-激子散射的影響，發現在280 K時，發光機制已由激子-激子散射轉變為電子-電洞電漿(electron-hole plasma, EHP)。 The excitonic properties of ZnMgO were studied by photoluminescence (PL) in this thesis. At room-temperature we found that the interaction between excitons and phonons is strong in ZnMgO powders grown by sol-gel method. The enhancement of the interaction is due to the surface-defects. We try to solve this problem by modifying the surface condition, but in vain. Therefore we have grown ZnMgO thin film by radio-frequency magnetron sputtering. The photoluminescence due to inelastic exciton-exciton scattering can be observed. Furthermore, we examined the thermal effect on the nonlinear emission band. At T = 280 K, the efficiency of inelastic exciton-exciton scattering quenches and the nonlinear emission band is due to electron-hole plasma (EHP).

氧化鋅鎂化合物半導體之激子特性 = Excitonic properties of ZnMgO semiconductor alloys
陳, 俊男

氧化鋅鎂化合物半導體之激子特性 = Excitonic properties of ZnMgO semiconductor alloys / 陳俊男撰 - [高雄市] : 撰者, 民100. - 44葉 ; 部份彩圖，表格 ; 30公分.
參考書目：葉40-42.
光致螢光photoluminescence

氧化鋅鎂化合物半導體之激子特性 = Excitonic properties of ZnMgO semiconductor alloys
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314 $a 指導教授：謝振豪博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本研究是利用光致螢光光譜技術，來分析氧化鋅鎂的激子特性。首先，我們發現以溶膠-凝膠法製成的氧化鋅鎂粉末(鎂濃度為0.01~0.07)在高溫時，激子-聲子間有很強烈的交互作用，且當粒徑越大時，交互作用越強。經過分析後，激子-聲子交互作用強烈的原因來自表面缺陷，因此我們在樣品表面做一些處理，但無法有效改善。之後，我們改以射頻磁控濺鍍法製作氧化鋅鎂薄膜(鎂濃度大約為0.03)，成功地觀察到激子-激子散射光譜，並研究溫度對激子-激子散射的影響，發現在280 K時，發光機制已由激子-激子散射轉變為電子-電洞電漿(electron-hole plasma, EHP)。 The excitonic properties of ZnMgO were studied by photoluminescence (PL) in this thesis. At room-temperature we found that the interaction between excitons and phonons is strong in ZnMgO powders grown by sol-gel method. The enhancement of the interaction is due to the surface-defects. We try to solve this problem by modifying the surface condition, but in vain. Therefore we have grown ZnMgO thin film by radio-frequency magnetron sputtering. The photoluminescence due to inelastic exciton-exciton scattering can be observed. Furthermore, we examined the thermal effect on the nonlinear emission band. At T = 280 K, the efficiency of inelastic exciton-exciton scattering quenches and the nonlinear emission band is due to electron-hole plasma (EHP).
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