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非極性a平面氮化鎵和(11-22)半極性氮化銦鎵/氮化鎵多重量子井之異向...

國立高雄大學應用物理學系碩士班

非極性a平面氮化鎵和(11-22)半極性氮化銦鎵/氮化鎵多重量子井之異向性質與氮極性氮化鎵低溫緩衝層生長時間對於樣品品質的影響之研究 = Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN

Record Type:	Language materials, printed : monographic
Paralel Title:	Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN
Author:	陳佑瑜,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民100
Description:	130葉部份彩圖，表格 : 30公分;
Subject:	氮極性氮化鎵
Subject:	N-polar GaN
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/90832730299806589742
Notes:	參考書目：葉13-15
Notes:	內容為英文
Summary:	本論文討論氮極性氮化鎵、非極性a平面氮化鎵成長在r平面的藍寶石基板上、與(11-22)半極性多量子井樣品的異向性質，此三類樣品皆由有機金屬氣相沉積法生長。樣品的光學的品質是利用光激螢光(PL)、時間解析光激螢光系統(TRPL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)和陰極發光系統(CL)來測量。首先，我們探討成長不同的低溫緩衝層時間(114、120和180秒)，對氮極性氮化鎵樣品的光學性質之影響。低溫緩衝層成長時間較長，光學品質會下降且會有較粗糙的表面。此外，我們也探討光致螢光光譜之波峰位置不同與應力有關。第二，探討非極性a平面氮化鎵成長於r平面的藍寶石基板上，在不同厚度的第一步a平面氮化鎵條件下的樣品，對於非極性a平面氮化鎵樣品，在陰極發光光譜中，主要發光位置在波長365奈米，這與部分差排終止於堆疊差排有關，且在光激螢光光譜中，有兩個主要的發光波峰在波長355和363奈米，分別是來自於近能帶發光和堆疊差排。第三，對於(11-22)半極性多量子井氮化銦鎵/氮化鎵樣品，在光激螢光光譜中，會有一個主要的波峰在波長403奈米左右來自於氮化銦鎵，其它微弱的發光波峰則是屬於氮化鎵的訊號。樣品有較強的陰極發光時，會觀察到表面有較大條紋且粗糙的表面形貌。 This thesis studies the anisotropic properties of N-polar GaN, nonpolar a-plane GaN, and (11-22) semipolar InGaN/GaN MQW samples grown by MOVCD. The optical and material properties were investigated by photoluminescence (PL), and time-resolved PL measurements, atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), and cathodoluminescence (CL). First, for N-polar GaN samples, we study the effects of the buffer layer growth times on the material and optical properties of three N-polar GaN samples with different growth times (114, 120, and 180 seconds) of low temperature (LT) buffer layer. As the growth time of the low temperature buffer increases, the PL and CL intensities decrease, due to a rougher surface morphology. Also, the stress is associated with PL peak position by Raman scattering.Second, we study nonpolar a-plane GaN on r-sapphire with the different thickness first-step a-GaN. For nonpolar a-plane GaN samples, the main peak (~365 nm) in the CL spectrum is associated with the partial dislocation terminating basal stacking faults (BSFs) and two main peaks around ~355 nm and ~363 nm in PL the spectrum are attributed to near-band-edge (NBE) emission and BSFs, respectively. Third, for (11-22) semipolar InGaN/GaN MQW samples, the main peak around ~403 nm is the InGaN-related emission, while the other weak peaks are the GaN-related emission in the PL Spectrum. As the sample has the stronger CL luminescence, the striation feature with a rougher surface morphology can be observed.

非極性a平面氮化鎵和(11-22)半極性氮化銦鎵/氮化鎵多重量子井之異向性質與氮極性氮化鎵低溫緩衝層生長時間對於樣品品質的影響之研究 = Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN
陳, 佑瑜

非極性a平面氮化鎵和(11-22)半極性氮化銦鎵/氮化鎵多重量子井之異向性質與氮極性氮化鎵低溫緩衝層生長時間對於樣品品質的影響之研究 = Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN / 陳佑瑜撰 - [高雄市] : 撰者, 民100. - 130葉 ; 部份彩圖，表格 ; 30公分.
參考書目：葉13-15內容為英文.
氮極性氮化鎵N-polar GaN

非極性a平面氮化鎵和(11-22)半極性氮化銦鎵/氮化鎵多重量子井之異向性質與氮極性氮化鎵低溫緩衝層生長時間對於樣品品質的影響之研究 = Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN
LDR:04643nam0a2200289 450 001 300484
005 20170214094119.0
009 300484
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214d2011 k y0chiy50 e
101 1 $a eng $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 非極性a平面氮化鎵和(11-22)半極性氮化銦鎵/氮化鎵多重量子井之異向性質與氮極性氮化鎵低溫緩衝層生長時間對於樣品品質的影響之研究 $d Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN $z eng $f 陳佑瑜撰
210 $a [高雄市] $c 撰者 $d 民100
215 0 $a 130葉 $c 部份彩圖，表格 $d 30公分
300 $a 參考書目：葉13-15
300 $a 內容為英文
314 $a 指導教授：馮世維博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本論文討論氮極性氮化鎵、非極性a平面氮化鎵成長在r平面的藍寶石基板上、與(11-22)半極性多量子井樣品的異向性質，此三類樣品皆由有機金屬氣相沉積法生長。樣品的光學的品質是利用光激螢光(PL)、時間解析光激螢光系統(TRPL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)和陰極發光系統(CL)來測量。首先，我們探討成長不同的低溫緩衝層時間(114、120和180秒)，對氮極性氮化鎵樣品的光學性質之影響。低溫緩衝層成長時間較長，光學品質會下降且會有較粗糙的表面。此外，我們也探討光致螢光光譜之波峰位置不同與應力有關。第二，探討非極性a平面氮化鎵成長於r平面的藍寶石基板上，在不同厚度的第一步a平面氮化鎵條件下的樣品，對於非極性a平面氮化鎵樣品，在陰極發光光譜中，主要發光位置在波長365奈米，這與部分差排終止於堆疊差排有關，且在光激螢光光譜中，有兩個主要的發光波峰在波長355和363奈米，分別是來自於近能帶發光和堆疊差排。第三，對於(11-22)半極性多量子井氮化銦鎵/氮化鎵樣品，在光激螢光光譜中，會有一個主要的波峰在波長403奈米左右來自於氮化銦鎵，其它微弱的發光波峰則是屬於氮化鎵的訊號。樣品有較強的陰極發光時，會觀察到表面有較大條紋且粗糙的表面形貌。 This thesis studies the anisotropic properties of N-polar GaN, nonpolar a-plane GaN, and (11-22) semipolar InGaN/GaN MQW samples grown by MOVCD. The optical and material properties were investigated by photoluminescence (PL), and time-resolved PL measurements, atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), and cathodoluminescence (CL). First, for N-polar GaN samples, we study the effects of the buffer layer growth times on the material and optical properties of three N-polar GaN samples with different growth times (114, 120, and 180 seconds) of low temperature (LT) buffer layer. As the growth time of the low temperature buffer increases, the PL and CL intensities decrease, due to a rougher surface morphology. Also, the stress is associated with PL peak position by Raman scattering.Second, we study nonpolar a-plane GaN on r-sapphire with the different thickness first-step a-GaN. For nonpolar a-plane GaN samples, the main peak (~365 nm) in the CL spectrum is associated with the partial dislocation terminating basal stacking faults (BSFs) and two main peaks around ~355 nm and ~363 nm in PL the spectrum are attributed to near-band-edge (NBE) emission and BSFs, respectively. Third, for (11-22) semipolar InGaN/GaN MQW samples, the main peak around ~403 nm is the InGaN-related emission, while the other weak peaks are the GaN-related emission in the PL Spectrum. As the sample has the stronger CL luminescence, the striation feature with a rougher surface morphology can be observed.
510 1 $a Investigations of the Anisotropic Property of Nonpolar a-plane GaN,(11-22) Semipolar InGaN/GaN Multiple Quantum Wells and the Effects of Growth Time of Low-Temperature Buffer Layer on the Sample Quality of N-polar GaN $z eng
610 0 $a 氮極性氮化鎵 $a 非極性a平面氮化鎵 $a (11-22)半極性氮化銦鎵/氮化鎵多量子井 $a 異向性質
610 1 $a N-polar GaN $a Nonpolar a-Plane GaN $a (11-22) Semipolar InGaN/GaN MQWs $a Anisotropic property
681 $a 008M/0019 $b 423203 7521 $v 2007年版
700 1 $a 陳 $b 佑瑜 $4 撰 $3 518875
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b NUK $c 20111102 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/90832730299806589742