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合適的廣義性指數方法解決量子校正能量運輸模型第二部分：模擬 = Gene...

卞鈺鈞

合適的廣義性指數方法解決量子校正能量運輸模型第二部分：模擬 = Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation

Record Type:	Language materials, printed : monographic
Paralel Title:	Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation
Author:	卞鈺鈞,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民100
Description:	58葉圖 : 30公分;
Subject:	量子校正能量運輸模型
Subject:	Exponentially Fitted Scheme
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/75203535688183920557
Notes:	參考書目：葉52-55
Notes:	內容為英文
Summary:	本論文是一個延續徐瑋玲的論文在指數擬合有限元方法的量子校正能源運輸（QCET）模型，提出並分析。該 QCET 模型由七個非線性偏微分方程描述電子和孔流向半導體納米器件。該公式的離散新方法是專門推導出質量守恆和能量守恆方程。相對於標準 Scharfetter-Gummel 方法，新方法不涉及伯努利函數在離散系統。通過解決納米級二極管模型，新方法幾乎給出了與標準Scharfetter-Gummel 方法同樣的計算結果。 This thesis is a continuation of W.-L. Hsu’s thesis [16] in which anexponentially fitted finite element method for the quantum-correctedenergy transport (QCET) model is proposed and analyzed. The QCETmodel consists of seven nonlinear PDEs describing the electron andhole flows in semiconductor nano-devices. The discrete formulas ofthe new method are specifically derived for mass conservation and energyconservation equations. Compared with the standard Scharfetter-Gummel method, the new method does not involve the Bernoulli functionin the discrete systems. By solving a nano-scale diode model, it isshown that the new method almost gives the same numerical resultsas that obtained by the standard SG method.

合適的廣義性指數方法解決量子校正能量運輸模型第二部分：模擬 = Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation
卞, 鈺鈞

合適的廣義性指數方法解決量子校正能量運輸模型第二部分：模擬 = Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation / 卞鈺鈞撰 - [高雄市] : 撰者, 民100. - 58葉 ; 圖 ; 30公分.
參考書目：葉52-55內容為英文.
量子校正能量運輸模型Exponentially Fitted Scheme

合適的廣義性指數方法解決量子校正能量運輸模型第二部分：模擬 = Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation
LDR:02471nam0a2200289 450 001 300503
005 20170214092644.0
009 300503
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214d2011 k y0chiy50 e
101 1 $a eng $d chi $d eng
102 $a tw
105 $a a am 000yy
200 1 $a 合適的廣義性指數方法解決量子校正能量運輸模型第二部分：模擬 $d Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation $z eng $f 卞鈺鈞撰
210 $a [高雄市] $c 撰者 $d 民100
215 0 $a 58葉 $c 圖 $d 30公分
300 $a 參考書目：葉52-55
300 $a 內容為英文
314 $a 指導教授：劉晉良
328 $a 碩士論文--國立高雄大學應用數學系碩士班
330 $a 本論文是一個延續徐瑋玲的論文在指數擬合有限元方法的量子校正能源運輸（QCET）模型，提出並分析。該 QCET 模型由七個非線性偏微分方程描述電子和孔流向半導體納米器件。該公式的離散新方法是專門推導出質量守恆和能量守恆方程。相對於標準 Scharfetter-Gummel 方法，新方法不涉及伯努利函數在離散系統。通過解決納米級二極管模型，新方法幾乎給出了與標準Scharfetter-Gummel 方法同樣的計算結果。 This thesis is a continuation of W.-L. Hsu’s thesis [16] in which anexponentially fitted finite element method for the quantum-correctedenergy transport (QCET) model is proposed and analyzed. The QCETmodel consists of seven nonlinear PDEs describing the electron andhole flows in semiconductor nano-devices. The discrete formulas ofthe new method are specifically derived for mass conservation and energyconservation equations. Compared with the standard Scharfetter-Gummel method, the new method does not involve the Bernoulli functionin the discrete systems. By solving a nano-scale diode model, it isshown that the new method almost gives the same numerical resultsas that obtained by the standard SG method.
510 1 $a Generalized Exponentially Fitted Scheme for the Quantum-Corrected Transport Model Part II: Simulation $z eng
610 0 $a 量子校正能量運輸模型 $a 指數方法 $a 半導體
610 1 $a Exponentially Fitted Scheme $a Semiconductor $a Quantum-Corrected Energy Transport
681 $a 008M/0019 $b 462101 0088 $v 2007年版
700 1 $a 卞 $b 鈺鈞 $4 撰 $3 518891
712 0 2 $a 國立高雄大學 $b 應用數學系碩士班 $3 166142
801 0 $a tw $b NUK $c 20111026 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/75203535688183920557