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Random Dopants and Low-Frequency Noi...

Miller, Drake A.

Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology.
作者:	Miller, Drake A.
面頁冊數:	164 p.
附註:	Source: Dissertation Abstracts International, Volume: 72-06, Section: B, page: .
附註:	Adviser: Leonard Forbes.
Contained By:	Dissertation Abstracts International72-06B.
標題:	Engineering, Electronics and Electrical.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3452569
ISBN:	9781124596044

Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology.
Miller, Drake A.

Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology. - 164 p.

Source: Dissertation Abstracts International, Volume: 72-06, Section: B, page: .

Thesis (Ph.D.)--Oregon State University, 2011.

The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each technological node which affects both analog and digital circuits in terms of decreased yields, performance, and noise margins.

ISBN: 9781124596044Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology.
LDR:03061nmm 2200301 4500 001 309697
005 20111105132448.5
008 111212s2011 ||||||||||||||||| ||eng d
020 $a 9781124596044
035 $a (UMI)AAI3452569
035 $a AAI3452569
040 $a UMI $c UMI
100 1 $a Miller, Drake A. $3 531022
245 1 0 $a Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology.
300 $a 164 p.
500 $a Source: Dissertation Abstracts International, Volume: 72-06, Section: B, page: .
500 $a Adviser: Leonard Forbes.
502 $a Thesis (Ph.D.)--Oregon State University, 2011.
520 $a The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each technological node which affects both analog and digital circuits in terms of decreased yields, performance, and noise margins.
520 $a At deep sub-micron dimensions the Low-Frequency Noise (LFN) of the MOSFET is dominated by the influence of one or more active traps capturing and emitting charge to and from the oxide creating wide variations in the LFN from otherwise identical devices. Additionally, the random position of dopant atoms near the Si/SiO2 interface create a potential landscape that induces regions of high and low conductivity which in turn causes a situation where the current is no longer uniform in the device, but consist of individual current paths or percolating currents. The coupling between the random variation of the percolation current and active traps in the oxide are responsible for the large spread ( > 3 orders of magnitude) in the noise characteristics observed in deep sub-micron MOSFET devices. The compact LFN model presented here accounts for the action of traps on percolating currents in deep-sub-micron and nano-scale MOSFETs.
520 $a Two schemes for reduction of LFN are studied based on the smoothing of the surface potential. First, noise reduction is demonstrated with measurements on sub-micron MOSFETs with forward substrate bias. Secondly, the model is further verified through the reduction of noise by the removal of dopant atoms near the Si/SiO2 interface of the device. Both schemes result in a lower noise and threshold device.
520 $a Finally, these experimental findings are applied to a 2.2microm 2 MP CMOS image sensor. From the temporal noise measurements on threshold implant process splits, the image sensor noise has been significantly reduced as a direct result of fundamentals described by this MOSFET LFN model and further proves the validity of these findings.
590 $a School code: 0172.
650 4 $a Engineering, Electronics and Electrical. $3 226981
690 $a 0544
710 2 $a Oregon State University. $3 290823
773 0 $t Dissertation Abstracts International $g 72-06B.
790 1 0 $a Forbes, Leonard, $e advisor
790 $a 0172
791 $a Ph.D.
792 $a 2011
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3452569