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自組裝鉑奈米粒子於非揮發記憶體的應用 = Self-assembled ...

國立高雄大學化學工程及材料工程學系碩士班

自組裝鉑奈米粒子於非揮發記憶體的應用 = Self-assembled platinum nanoparticles for non-volatile memory applications

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Self-assembled platinum nanoparticles for non-volatile memory applications
作者:	蕭安青,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2012[民101]
面頁冊數:	108面圖，表 : 30公分;
標題:	高介電材料
標題:	high-k material
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/52865999389056157561
附註:	參考書目：面102-108
摘要註:	傳統的快閃記憶體是以浮動閘極作為儲存電荷，但是隨著記憶體的元件發展尺寸縮小，高密集度的發展，常常會使元件面臨漏電流的問題，為了使記憶體元件整體的特性增加，於是奈米晶粒記憶體被發展出來。本篇的論文研究主要以化學還原方法來合成出金跟白金奈米粒子，並且利用APTMS這種有機物來把奈米粒子自組裝於兩種不同的氧化層，分別是SiO2，HfO2，其中HfO2是以溶膠凝膠法來合成(so-gel法)，最後再覆蓋HfO2當為控制氧化層，這樣就就構成一個最基本且簡單的奈米晶粒記憶體結構。為了提升記憶體的整體電性，試著改變原本記憶體的結構來。在本研究中，我們使用兩種方法。一個是在原本基本的記憶體結構改變APTMS的層數。另一個是在原有基本的結構再覆蓋不同APTMS的層數。從本文的結果可知，APTMS層數的變化會改變記憶體的電性。隨著鍍製APTMS的層數增加，電性有越佳的趨勢。而在原本記憶體結構覆蓋不同APTMS的層數，發現電性並沒有較佳。除此之外，白金奈米粒子所建構的記憶體結構之整體特性會比金奈米粒子會來的佳，且HfO2作為穿隧氧化層所建構的記憶體結構整體的電性比SiO2為穿隧氧化層來的佳。最後搭配浸鍍法來浸鍍APTMS所建構的記憶體結構所量到的電性沒有很理想，若再浸泡於HfO2溶液則會幫助電性改善。 Conventional flash memory , utilizing floating gate as charge storage nodes, however, had met the leakage challenges as the devices tend to be scaling down and have high densities. Therefore, the nanocrystal memory was presented.In this thesis, we use chemical reduction method to synthesize Au and Pt nanoparticles, and use the organic compound “APTMS” to make the nanoparticles being self-assembled on two kinds of oxide layer, SiO2 and HfO2 , respectively. By the way, HfO2 is synthesized by sol-gel method. Finally, it is covered by HfO2 as a control oxide to construct a simple nanocrystal memory. In order to raise electrical properties of memory, we try to change structure of memory. In my study, we use two methods. One is to change different layers of APTMS on original memory structure. The other is to cover different layers of APTMS on original memory structure. The results obtained from this work showed that variable on layers of APTMS deposited change electrical properties of the memory. Electrical properties become better with the increase in the number of APTMS layers deposited. However, we found electrical properties were not exactly better when it is covered by different layers of APTMS on the original memory structure. In addition, the nanocrystal memory device fabricated with Pt nanoparticles has better electrical properties than Au nanoparticles. The nanocrystal memory device with HfO2 as tunneling oxide has better electrical properties than the one with SiO2 as tunneling oxide. Finally, the electrical properties of nanocrystal memory fabricated by combining with dipping APTMS are not ideal, improving the electrical properties with dipping HfO2 solution.

自組裝鉑奈米粒子於非揮發記憶體的應用 = Self-assembled platinum nanoparticles for non-volatile memory applications
蕭, 安青

自組裝鉑奈米粒子於非揮發記憶體的應用 = Self-assembled platinum nanoparticles for non-volatile memory applications / 蕭安青撰 - [高雄市] : 撰者, 2012[民101]. - 108面 ; 圖，表 ; 30公分.
參考書目：面102-108.
高介電材料high-k material

自組裝鉑奈米粒子於非揮發記憶體的應用 = Self-assembled platinum nanoparticles for non-volatile memory applications
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