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磁控共濺鍍成長摻銅氧化鋅薄膜之物性研究 = The study of p...

匡建勳

磁控共濺鍍成長摻銅氧化鋅薄膜之物性研究 = The study of physical properties of Cu-doped ZnO films deposited by using a magnetron co-sputtering method

Record Type:	Language materials, printed : monographic
Paralel Title:	The study of physical properties of Cu-doped ZnO films deposited by using a magnetron co-sputtering method
Author:	匡建勳,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2011[民100]
Description:	137葉部份彩圖，表格 : 30公分;
Subject:	磁控濺鍍
Subject:	Rf-sputtering
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/87670385120070785523
Notes:	參考書目：葉126-129
Summary:	我們成功地使用磁控濺鍍系統製作了兩系列的摻銅氧化鋅薄膜，分別使用藍寶石基版與玻璃基版，並且控制銅摻雜濃度介於0~16 %之間。摻銅氧化鋅薄膜樣品皆為c軸取向的纖鋅結構，且我們沒有在剛生成的薄膜中檢測到銅及銅氧化物的訊號。在我們樣品中，銅並沒有扮演著產生鐵磁性或增強鐵磁性的角色，摻銅氧化鋅薄膜的磁性來源應為氧化鋅本質的缺陷。而在退火樣品中，我們觀察到了低溫超順磁性，這是由於薄膜內部Cu-O的平面奈米結構所造成的，從SEM量測中也能很明顯的看到薄膜表面出現大量的顆粒。 We deposited two-series Zn1-xCuxO films, which are made on sapphire and glass substrates by using the RF-sputtering. And we controlled the Cu-doped concentrate between 0 % and 16 %. Zn1-xCuxO films are c-axis-oriented wurtzite structure, and we didn’t discover any Cu-metal or Cu-oxide signal. In our samples, Cu atoms do not play the produce-ferromagnetism or enhance-ferromagnetism role. The magnetic sources of Zn1-xCuxO films should be the defects of ZnO. And in the annealing samples, we observed the low-temperature superparamagnetism, which is caused by Cu-O planar nano-structure. Scanning Electron Microscopy (SEM) also shows lots of particles in film’s surface.

磁控共濺鍍成長摻銅氧化鋅薄膜之物性研究 = The study of physical properties of Cu-doped ZnO films deposited by using a magnetron co-sputtering method
匡, 建勳

磁控共濺鍍成長摻銅氧化鋅薄膜之物性研究 = The study of physical properties of Cu-doped ZnO films deposited by using a magnetron co-sputtering method / 匡建勳撰 - [高雄市] : 撰者, 2011[民100]. - 137葉 ; 部份彩圖，表格 ; 30公分.
參考書目：葉126-129.
磁控濺鍍Rf-sputtering

磁控共濺鍍成長摻銅氧化鋅薄膜之物性研究 = The study of physical properties of Cu-doped ZnO films deposited by using a magnetron co-sputtering method
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330 $a 我們成功地使用磁控濺鍍系統製作了兩系列的摻銅氧化鋅薄膜，分別使用藍寶石基版與玻璃基版，並且控制銅摻雜濃度介於0~16 %之間。摻銅氧化鋅薄膜樣品皆為c軸取向的纖鋅結構，且我們沒有在剛生成的薄膜中檢測到銅及銅氧化物的訊號。在我們樣品中，銅並沒有扮演著產生鐵磁性或增強鐵磁性的角色，摻銅氧化鋅薄膜的磁性來源應為氧化鋅本質的缺陷。而在退火樣品中，我們觀察到了低溫超順磁性，這是由於薄膜內部Cu-O的平面奈米結構所造成的，從SEM量測中也能很明顯的看到薄膜表面出現大量的顆粒。 We deposited two-series Zn1-xCuxO films, which are made on sapphire and glass substrates by using the RF-sputtering. And we controlled the Cu-doped concentrate between 0 % and 16 %. Zn1-xCuxO films are c-axis-oriented wurtzite structure, and we didn’t discover any Cu-metal or Cu-oxide signal. In our samples, Cu atoms do not play the produce-ferromagnetism or enhance-ferromagnetism role. The magnetic sources of Zn1-xCuxO films should be the defects of ZnO. And in the annealing samples, we observed the low-temperature superparamagnetism, which is caused by Cu-O planar nano-structure. Scanning Electron Microscopy (SEM) also shows lots of particles in film’s surface.
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