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化學水浴法中醋酸濃度對硫化銦薄膜之特性研究 = Studies on I...

國立高雄大學電機工程學系碩士班

化學水浴法中醋酸濃度對硫化銦薄膜之特性研究 = Studies on In2S3 thin films by chemical bath deposition withdifferent acetic acid concentration

Record Type:	Language materials, printed : monographic
Paralel Title:	Studies on In2S3 thin films by chemical bath deposition withdifferent acetic acid concentration
Author:	許文千,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2011[民100]
Description:	64葉部份彩圖，表格 : 30公分;
Subject:	化學水浴法
Subject:	chemical bath deposition
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/48738043691581660563
Notes:	參考書目：葉46-48
Summary:	本論文以化學水浴法在製作硫化銦薄膜的研究，藉由沉積在玻璃基板上的硫化銦薄膜研究其表面型態以及光學性質。在p型矽基板上以不同的醋酸濃度沉積硫化銦薄膜之後鍍上電極，得到電流-電壓以及電容-電壓特性。不同偏壓下的光響應也是由此得到。樣品的能帶圖也在本論文的討論之中。 In this thesis,the In2S3 film formed by chemical bath deposition(CBD)were studied.The surface morphology and optical properties werestudied for the film deposited on glass substrate.Under the formationof contacts,the current-voltage and capacitance-voltage behaviorswere studied for the films deposited on p-type silicon wafer withdifferent acetic acid concentration.The spectral responsivityanalysis under different bias were applied also.The band diagram wasachieved and discussed.

化學水浴法中醋酸濃度對硫化銦薄膜之特性研究 = Studies on In2S3 thin films by chemical bath deposition withdifferent acetic acid concentration
許, 文千

化學水浴法中醋酸濃度對硫化銦薄膜之特性研究 = Studies on In2S3 thin films by chemical bath deposition withdifferent acetic acid concentration / 許文千撰 - [高雄市] : 撰者, 2011[民100]. - 64葉 ; 部份彩圖，表格 ; 30公分.
參考書目：葉46-48.
化學水浴法chemical bath deposition

化學水浴法中醋酸濃度對硫化銦薄膜之特性研究 = Studies on In2S3 thin films by chemical bath deposition withdifferent acetic acid concentration
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328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本論文以化學水浴法在製作硫化銦薄膜的研究，藉由沉積在玻璃基板上的硫化銦薄膜研究其表面型態以及光學性質。在p型矽基板上以不同的醋酸濃度沉積硫化銦薄膜之後鍍上電極，得到電流-電壓以及電容-電壓特性。不同偏壓下的光響應也是由此得到。樣品的能帶圖也在本論文的討論之中。 In this thesis,the In2S3 film formed by chemical bath deposition(CBD)were studied.The surface morphology and optical properties werestudied for the film deposited on glass substrate.Under the formationof contacts,the current-voltage and capacitance-voltage behaviorswere studied for the films deposited on p-type silicon wafer withdifferent acetic acid concentration.The spectral responsivityanalysis under different bias were applied also.The band diagram wasachieved and discussed.
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