| 摘要註: |
近十年內，隨著科技的不斷進步，使得3C產業蓬勃發展，各形各類的光電元件也被廣泛的運用於不同形式的產品上。相對而言，電子及光學設備上均不可缺少透明導電氧化物薄膜的使用，也帶動了透明導電薄膜技術的開發，而這都歸因於透明導電薄膜的發展技術已經逐漸成熟。 本研究主要探討摻雜鋁(Aluminum)、銦(Indium)及鎵(Gallium)之氧化鋅(Zinc Oxide)薄膜的晶體結構、表面形態、光學特性與電學特性，而濺鍍所使用之基板選擇的部分，因為考慮到透光性，以及未來需要用到加熱之步驟，所以以熔點較高的康寧玻璃(EagleXG Substrate)為基板，將所需靶材經過射頻磁控濺鍍(RF Magnetron Sputtering)系統去沉積出薄膜後，再分別進行X-ray繞射儀分析、掃描式電子顯微鏡。原子力顯微鏡、光譜儀分析及霍爾量測進行分析。經研究結果顯示，調整沉積之基板溫度及濺鍍功率，均會影響到透明導電薄膜的各項特性。而摻雜鋁之氧化鋅再摻雜入銦或鎵所沉積之薄膜，可從分析中得知，有添加氧化銦及氧化鎵之薄膜的表面晶粒大小相較只添加鋁的氧化鋅薄膜會有較大的成長，且其結晶度也會有較佳的表現。整體而言，在多重摻雜入氧化銦及氧化鎵之AZO薄膜，基板溫度提升會使晶粒成長，濺鍍功率提升，也會使結晶度及導電度提高，且有Burstein-Moss 效應產生，但是例外為，鎵的添加為0.25mol%(AZOG0.25)時之薄膜，在150W濺鍍功率時所沉積之薄膜會出現再濺鍍現象，而使導電度略降，其他的薄膜表現均隨溫度上升及濺鍍功率提升使其薄膜特性越佳。而由Hall分析可觀察出，在本實驗中的最佳條件時，即基板溫度：300oC & 濺鍍功率：150W(除了AZOG0.25之最佳濺鍍功率為125W)，當添加量均在0.5mol%時的電阻率均會比AZO薄膜之電阻率(1.26×10-3Ω-cm)降低，分別為6.73×10-3Ω-cm及6.68×10-3Ω-cm。 In the past ten years, as the science technologies are developed, the 3C industry has been developed and various types of optical components are also widely used in the different electronic and optical products. In general, the transparent conducting oxide thin films are indispensable in the electronic and optical products. For that, the transparent conductive thin film technologies are investigated because the applications of the transparent conductive thin films in the electronic and optical products are mature.In this study, we developed the crystalline structure, the surface properties, the optoelectronic properties, and the electrical properties of the aluminum doped (AZO), the aluminum-indium-codoped (AZOI), and the aluminum-gallium-codoped (AZOG) zinc oxide thin films by using RF Magnetron sputtering method. The optical and electrical properties of the AZO, AZOI, and AZOG thin films were investigated by changing the substrate temperatures from room temperature to 300oC and by changing the RF powder from 75W to 150W. The X-ray diffraction pattern, scanning electron microscopy, atomic force microscopy, spectroscopy analysis, and four-point probe analysis are used to develop the properties of the AZO, AZOI, and AZOG thin films.The results show that the deposition substrate temperature and sputtering power will affect the transparent conducting characteristics of the AZO, AZOI, and AZOG thin films. From the SEM morphologies of the AZO, AZOI, and AZOG thin films, the surface grain sizes of the AZOI and AZOG thin films were larger than those of the AZO thin films. Also, the crystallinity of the AZOI and AZOG thin films was better than that of the AZO thin films.In a word, the substrate temperature will affect the surface morphologies of the AZO, AZOI, and AZOG thin films, the sputtering power will also improve the crystallization and conductivity of the AZO, AZOI, and AZOG thin films. When the 0.25 mol%-Ga-doped AZO composition was used as the target and sputtering power was 150W, the re-sputtering phenomenon was observed in the deposited thin films, and that caused the decrease of the conductivity. However, in this study, the properties of the AZO, AZOI, and AZOG thin films in other compositions were improved as the substrate temperature and the RF power were increased. |