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噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation...

國立高雄大學電機工程學系碩士班

噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis

Record Type:	Language materials, printed : monographic
Paralel Title:	Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis
Author:	李紹頤,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2012[民101]
Description:	106面圖，表格 : 30公分;
Subject:	摻硼氧化鋅
Subject:	boron-doped zinc oxide (BZO)
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/66435925480719271097
Notes:	參考書目：面84-94
Summary:	本論文以噴霧裂解法在玻璃基板上沉積摻硼氧化鋅薄膜(boron-doped zinc oxide, BZO)，探討硼摻雜對於BZO 薄膜的結構，電性與光性。在剛沉積好的薄膜，[B]/[Zn]=1at%時可以得到載子濃度約為1.0E+19cm-3 以及在靠近紅外光的穿透率約為90%。在大氣環境以溫度600℃進行熱處理之後，當摻雜比例超過0.75at%，薄膜的導電機制由BZn-的摻雜形式主導，並且在光激發螢光譜中觀察到靠近能帶邊緣的訊號會隨著摻雜比例增加而改變。接著以氯化鋅當作前驅物溶液製備奈米柱結構(nanorods, NRs)的氧化鋅，分別沉積在玻璃基板與氮化鎵(gallium nitride, GaN)的發光二極體(light emitting diode, LED)晶粒上，改變沉積的時間來觀察奈米柱的表面形貌與電光性質。在適當的沉積時間可以讓LED 表面粗糙化使得發光強度增加，在垂直於晶粒方向的發光強度約有9%的上升幅度。 In this thesis, we deposit the boron-doped zinc oxide (BZO) thin film on glass substrates by spray pyrolysis. The boron doping on the structural, electrical and optical properties in BZO films were investigated. In the as-deposited films, the carrier concentration of ~1.0E+19cm-3 and optical transmittance about 90% in the near-infrared region was achieved in [B]/[Zn]=1at%. With followed heat treatment under air ambient and temperature is 600℃, the conductive mechanism of the film dominated by BZn type as the doping ratio exceeds 0.75at%, and observed in the photoluminescence (PL) spectra near the band edge emission will change with the doping ratio increases. Then zinc chloride as a precursor solution preparation of zinc oxide nanorods (NRs), were deposited on glass substrate and GaN-LED chips,changing the deposition time to observe the surface morphology and electro-optical properties of nanorods. At approprite deposition time, the luminous intensity in perpandicular to the chip direction can be ehanced about 9% by surface roughening.

噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis
李, 紹頤

噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis / 李紹頤撰 - [高雄市] : 撰者, 2012[民101]. - 106面 ; 圖，表格 ; 30公分.
參考書目：面84-94.
摻硼氧化鋅boron-doped zinc oxide (BZO)

噴霧裂解法製備氧化鋅薄膜與奈米結構之研究 = Investigation of Zinc Oxide Films and Nanostructures by Spray Pyrolysis
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330 $a 本論文以噴霧裂解法在玻璃基板上沉積摻硼氧化鋅薄膜(boron-doped zinc oxide, BZO)，探討硼摻雜對於BZO 薄膜的結構，電性與光性。在剛沉積好的薄膜，[B]/[Zn]=1at%時可以得到載子濃度約為1.0E+19cm-3 以及在靠近紅外光的穿透率約為90%。在大氣環境以溫度600℃進行熱處理之後，當摻雜比例超過0.75at%，薄膜的導電機制由BZn-的摻雜形式主導，並且在光激發螢光譜中觀察到靠近能帶邊緣的訊號會隨著摻雜比例增加而改變。接著以氯化鋅當作前驅物溶液製備奈米柱結構(nanorods, NRs)的氧化鋅，分別沉積在玻璃基板與氮化鎵(gallium nitride, GaN)的發光二極體(light emitting diode, LED)晶粒上，改變沉積的時間來觀察奈米柱的表面形貌與電光性質。在適當的沉積時間可以讓LED 表面粗糙化使得發光強度增加，在垂直於晶粒方向的發光強度約有9%的上升幅度。 In this thesis, we deposit the boron-doped zinc oxide (BZO) thin film on glass substrates by spray pyrolysis. The boron doping on the structural, electrical and optical properties in BZO films were investigated. In the as-deposited films, the carrier concentration of ~1.0E+19cm-3 and optical transmittance about 90% in the near-infrared region was achieved in [B]/[Zn]=1at%. With followed heat treatment under air ambient and temperature is 600℃, the conductive mechanism of the film dominated by BZn type as the doping ratio exceeds 0.75at%, and observed in the photoluminescence (PL) spectra near the band edge emission will change with the doping ratio increases. Then zinc chloride as a precursor solution preparation of zinc oxide nanorods (NRs), were deposited on glass substrate and GaN-LED chips,changing the deposition time to observe the surface morphology and electro-optical properties of nanorods. At approprite deposition time, the luminous intensity in perpandicular to the chip direction can be ehanced about 9% by surface roughening.
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610 1 $a boron-doped zinc oxide (BZO) $a spray pyrolysis $a photoluminescence $a zinc oxide nanorods $a surface roughening
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