國立高雄大學圖資館 |

Language: English

Back

多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-ju...

國立高雄大學應用物理學系碩士班

多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-junction tandem solar-cells devics：Theoretical modeling, simulation, and calculation with full solar spectrum

Record Type:	Language materials, printed : monographic
Paralel Title:	Mult-junction tandem solar-cells devics：Theoretical modeling, simulation, and calculation with full solar spectrum
Author:	陳彥宏,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2012[民101]
Description:	136面圖，表格 : 30公分;
Subject:	多接面堆疊式太陽能電池
Subject:	multi-junction tandem solar-cell
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/67469568960817870807
Notes:	參考書目：面120-121
Summary:	本論文由半導體基本公式推導太陽能電池模型中每一層的n-type與p-type中性區的少數載子濃度和電流密度分佈，模擬在太陽光全頻譜下照射，首先以矽為材料分析單接面太陽能電池特性，其轉換效率約20.5%。再來模擬雙接面的砷化鎵/矽堆疊式太陽電池，上層厚度約0.74µm，基板厚度約為210µm，最佳轉換效率約28.3%。而在多接面砷化鎵/矽/鍺堆疊式太陽能電池計算出，上層材料厚度約0.47µm，中層材料厚度約57.8µm，基板厚度約255µm，有最佳轉換效率約38.5%。最後再分析各種元件的特性參數，如摻雜濃度、少數載子生存期、表面復合速率等，對太陽能電池轉換效率的影響。 In this work, by using the basic equations of semiconductors, we calculate the space distribution of minority carrier density and current density in each layer quasi-neutral region of solar-cell devices with full solar spectrum. Firstly, we study the characteristics of single-junction solar cell with silicon materials 20.5% of the solar cell conversion efficiency is obtained. Secondly, double-junction GaAs/Si tandem solar cells are simulated with top layer thickness of about 0.74μm, and substrate thickness of about 210μm. These solar cells are shown to have the maximum efficiency of about 28.3%. Thirdly, calculation of triple-junction GaAs/Si/Ge tandem solar cells, with top layer thickness of about 0.47μm, the middle layer thickness of 57.8μm, and the substrate thickness of about 255μm is shown to have the best conversion efficiency of about 38.5%. Finally, various physical parameters are simulated to study their effects on the solar cells conversion efficiency. These parameters include the diffusion density, minority carrier lifetime, and surfacerecombination velocity.

多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-junction tandem solar-cells devics：Theoretical modeling, simulation, and calculation with full solar spectrum
陳, 彥宏

多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-junction tandem solar-cells devics：Theoretical modeling, simulation, and calculation with full solar spectrum / 陳彥宏撰 - [高雄市] : 撰者, 2012[民101]. - 136面 ; 圖，表格 ; 30公分.
參考書目：面120-121.
多接面堆疊式太陽能電池multi-junction tandem solar-cell

多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-junction tandem solar-cells devics：Theoretical modeling, simulation, and calculation with full solar spectrum
LDR:03060nam0a2200277 450 001 346236
005 20230610181155.0
009 346236
010 0 $b 精裝
010 0 $b 平裝
100 $a 20121108d2012 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 $d Mult-junction tandem solar-cells devics：Theoretical modeling, simulation, and calculation with full solar spectrum $z eng $f 陳彥宏撰
210 $a [高雄市] $c 撰者 $d 2012[民101]
215 0 $a 136面 $c 圖，表格 $d 30公分
300 $a 參考書目：面120-121
314 $a 指導教授：蔡進譯博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本論文由半導體基本公式推導太陽能電池模型中每一層的n-type與p-type中性區的少數載子濃度和電流密度分佈，模擬在太陽光全頻譜下照射，首先以矽為材料分析單接面太陽能電池特性，其轉換效率約20.5%。再來模擬雙接面的砷化鎵/矽堆疊式太陽電池，上層厚度約0.74µm，基板厚度約為210µm，最佳轉換效率約28.3%。而在多接面砷化鎵/矽/鍺堆疊式太陽能電池計算出，上層材料厚度約0.47µm，中層材料厚度約57.8µm，基板厚度約255µm，有最佳轉換效率約38.5%。最後再分析各種元件的特性參數，如摻雜濃度、少數載子生存期、表面復合速率等，對太陽能電池轉換效率的影響。 In this work, by using the basic equations of semiconductors, we calculate the space distribution of minority carrier density and current density in each layer quasi-neutral region of solar-cell devices with full solar spectrum. Firstly, we study the characteristics of single-junction solar cell with silicon materials 20.5% of the solar cell conversion efficiency is obtained. Secondly, double-junction GaAs/Si tandem solar cells are simulated with top layer thickness of about 0.74μm, and substrate thickness of about 210μm. These solar cells are shown to have the maximum efficiency of about 28.3%. Thirdly, calculation of triple-junction GaAs/Si/Ge tandem solar cells, with top layer thickness of about 0.47μm, the middle layer thickness of 57.8μm, and the substrate thickness of about 255μm is shown to have the best conversion efficiency of about 38.5%. Finally, various physical parameters are simulated to study their effects on the solar cells conversion efficiency. These parameters include the diffusion density, minority carrier lifetime, and surfacerecombination velocity.
510 1 $a Mult-junction tandem solar-cells devics $e Theoretical modeling, simulation, and calculation with full solar spectrum $z eng
610 0 $a 多接面堆疊式太陽能電池 $a 計算模擬 $a 理論模型
610 1 $a multi-junction tandem solar-cell $a simulation $a th
681 $a 008M/0019 $b 423203 7503 $v 2007年版
700 1 $a 陳 $b 彥宏 $4 撰 $3 131017
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b NUK $c 20121107 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/67469568960817870807