多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-ju...
國立高雄大學應用物理學系碩士班

 

  • 多接面堆疊式太陽能電池元件之全頻譜理論模型與計算模擬 = Mult-junction tandem solar-cells devics:Theoretical modeling, simulation, and calculation with full solar spectrum
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: Mult-junction tandem solar-cells devics:Theoretical modeling, simulation, and calculation with full solar spectrum
    作者: 陳彥宏,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2012[民101]
    面頁冊數: 136面圖,表格 : 30公分;
    標題: 多接面堆疊式太陽能電池
    標題: multi-junction tandem solar-cell
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/67469568960817870807
    附註: 參考書目:面120-121
    摘要註: 本論文由半導體基本公式推導太陽能電池模型中每一層的n-type與p-type中性區的少數載子濃度和電流密度分佈,模擬在太陽光全頻譜下照射,首先以矽為材料分析單接面太陽能電池特性,其轉換效率約20.5%。再來模擬雙接面的砷化鎵/矽堆疊式太陽電池,上層厚度約0.74µm,基板厚度約為210µm,最佳轉換效率約28.3%。而在多接面砷化鎵/矽/鍺堆疊式太陽能電池計算出,上層材料厚度約0.47µm,中層材料厚度約57.8µm,基板厚度約255µm,有最佳轉換效率約38.5%。最後再分析各種元件的特性參數,如摻雜濃度、少數載子生存期、表面復合速率等,對太陽能電池轉換效率的影響。 In this work, by using the basic equations of semiconductors, we calculate the space distribution of minority carrier density and current density in each layer quasi-neutral region of solar-cell devices with full solar spectrum. Firstly, we study the characteristics of single-junction solar cell with silicon materials 20.5% of the solar cell conversion efficiency is obtained. Secondly, double-junction GaAs/Si tandem solar cells are simulated with top layer thickness of about 0.74μm, and substrate thickness of about 210μm. These solar cells are shown to have the maximum efficiency of about 28.3%. Thirdly, calculation of triple-junction GaAs/Si/Ge tandem solar cells, with top layer thickness of about 0.47μm, the middle layer thickness of 57.8μm, and the substrate thickness of about 255μm is shown to have the best conversion efficiency of about 38.5%. Finally, various physical parameters are simulated to study their effects on the solar cells conversion efficiency. These parameters include the diffusion density, minority carrier lifetime, and surfacerecombination velocity.
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310002291550 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 423203 7503 2012 一般使用(Normal) 在架 0
310002291568 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 423203 7503 2012 c.2 一般使用(Normal) 在架 0
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