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利用單步驟與雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵...

國立高雄大學應用物理學系碩士班

利用單步驟與雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵的各向異性平面應力與極化偏振度研究 = Investigations of Anisotropic in-plane Strains and Degree of Polarization in Semipolar (11-22) GaN Grown on m-sapphire Substrate by the One-step and Two-step Growth Processes

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Investigations of Anisotropic in-plane Strains and Degree of Polarization in Semipolar (11-22) GaN Grown on m-sapphire Substrate by the One-step and Two-step Growth Processes
作者:	蔡忠憲,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2012[民101]
面頁冊數:	123面部份彩圖，表格 : 30公分;
標題:	半極性(11-22)氮化鎵
標題:	Semipolar (11-22) GaN
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/23189401464650062316
附註:	參考書目：面83-84
附註:	內容為英文
摘要註:	本論文主要討論利用雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵的異相特性，樣品皆由有機金屬氣相沉積法(MOCVD)生長。樣品的異向特性是利用光激螢光(PL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)、陰極發光系統(CL)和拉曼光譜來測量。首先，我們探討使用不同的緩衝層材料(氮化鋁、氮化鎵)對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性之影響。另外，探討利用雙步驟成長方法對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性之影響。結果發現，使用氮化鎵為緩衝層的樣品具有下列特點：發光強度較強、表面較平坦、極化偏振度較低。因此，氮化鎵比氮化鋁更適合做為半極性氮化鎵與m平面的藍寶石基板之間的緩衝層。另外，雙步驟成長方法可以減少樣品缺陷密度與提升樣品品質。第二，我們探討改變半極性(11-22)氮化鎵層的厚度對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性之影響。同時，也探討利用雙步驟成長方法對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性影響。結果顯示，第一個成長過程的半極性(11-22)氮化鎵層的厚度越厚，樣品的品質越好。使用雙步驟成長方法的樣品有下列特點：發光強度較強、表面較平坦、極化偏振度較低。這結果顯示雙步驟成長方法可以減少樣品的缺陷密度與提升樣品的品質。 This thesis studies the anisotropic properties of semipolar (11-22) GaN grown on m-sapphire substrate by the one-step and two-step growth processes. The anisotropic properties were investigated by photoluminescence (PL), atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), cathodoluminescence (CL), and Raman measurements. First, we study the semipolar (11-22) GaN grown on m-sapphire substrate by one-step growth with different buffer layers (AlN and GaN) and by complete two-step growth with GaN buffer layer. Better optical performance, smoother surface, and lower degree of polarization (DOP) were observed for samples with GaN buffer layer. The more suitable material of buffer layer for the growth of semipolar (11-22) GaN is GaN rather than AlN. The two-step growth can reduce defect density and improve sample quality.Second, we study the anisotropic properties of semipolar (11-22) GaN grown on m-sapphire substrate with different first-step growth thicknesses and complete two-step growth. It is shown that the larger the first-step growth thickness of semipolar (11-22) GaN, the better the sample quality. Better optical performance, smoother surface, and lower degree of polarization (DOP) were observed for samples by the two-step growth process. This shows that the two-step growth can reduce defect density and improve sample quality.

利用單步驟與雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵的各向異性平面應力與極化偏振度研究 = Investigations of Anisotropic in-plane Strains and Degree of Polarization in Semipolar (11-22) GaN Grown on m-sapphire Substrate by the One-step and Two-step Growth Processes
蔡, 忠憲

利用單步驟與雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵的各向異性平面應力與極化偏振度研究 = Investigations of Anisotropic in-plane Strains and Degree of Polarization in Semipolar (11-22) GaN Grown on m-sapphire Substrate by the One-step and Two-step Growth Processes / 蔡忠憲撰 - [高雄市] : 撰者, 2012[民101]. - 123面 ; 部份彩圖，表格 ; 30公分.
參考書目：面83-84內容為英文.
半極性(11-22)氮化鎵Semipolar (11-22) GaN

利用單步驟與雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵的各向異性平面應力與極化偏振度研究 = Investigations of Anisotropic in-plane Strains and Degree of Polarization in Semipolar (11-22) GaN Grown on m-sapphire Substrate by the One-step and Two-step Growth Processes
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330 $a 本論文主要討論利用雙步驟成長在m-平面藍寶石基板上之半極性(11-22)氮化鎵的異相特性，樣品皆由有機金屬氣相沉積法(MOCVD)生長。樣品的異向特性是利用光激螢光(PL)、原子力顯微鏡(AFM)、場發射電子顯微鏡(FE-SEM)、陰極發光系統(CL)和拉曼光譜來測量。首先，我們探討使用不同的緩衝層材料(氮化鋁、氮化鎵)對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性之影響。另外，探討利用雙步驟成長方法對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性之影響。結果發現，使用氮化鎵為緩衝層的樣品具有下列特點：發光強度較強、表面較平坦、極化偏振度較低。因此，氮化鎵比氮化鋁更適合做為半極性氮化鎵與m平面的藍寶石基板之間的緩衝層。另外，雙步驟成長方法可以減少樣品缺陷密度與提升樣品品質。第二，我們探討改變半極性(11-22)氮化鎵層的厚度對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性之影響。同時，也探討利用雙步驟成長方法對於半極性(11-22)氮化鎵成長在m平面的藍寶石基板上的異向特性影響。結果顯示，第一個成長過程的半極性(11-22)氮化鎵層的厚度越厚，樣品的品質越好。使用雙步驟成長方法的樣品有下列特點：發光強度較強、表面較平坦、極化偏振度較低。這結果顯示雙步驟成長方法可以減少樣品的缺陷密度與提升樣品的品質。 This thesis studies the anisotropic properties of semipolar (11-22) GaN grown on m-sapphire substrate by the one-step and two-step growth processes. The anisotropic properties were investigated by photoluminescence (PL), atomic force microscopy (AFM), field-emission electron microscopy (FE-SEM), cathodoluminescence (CL), and Raman measurements. First, we study the semipolar (11-22) GaN grown on m-sapphire substrate by one-step growth with different buffer layers (AlN and GaN) and by complete two-step growth with GaN buffer layer. Better optical performance, smoother surface, and lower degree of polarization (DOP) were observed for samples with GaN buffer layer. The more suitable material of buffer layer for the growth of semipolar (11-22) GaN is GaN rather than AlN. The two-step growth can reduce defect density and improve sample quality.Second, we study the anisotropic properties of semipolar (11-22) GaN grown on m-sapphire substrate with different first-step growth thicknesses and complete two-step growth. It is shown that the larger the first-step growth thickness of semipolar (11-22) GaN, the better the sample quality. Better optical performance, smoother surface, and lower degree of polarization (DOP) were observed for samples by the two-step growth process. This shows that the two-step growth can reduce defect density and improve sample quality.
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610 1 $a Semipolar (11-22) GaN $a Anisotropic property $a two-step growth process $a Anisotropic Strain
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