含有苝四羧酸酐及菲基-咪唑分子衍生物之接枝式共軛高分子的合成及其有機光伏...
國立高雄大學化學工程及材料工程學系碩士班

 

  • 含有苝四羧酸酐及菲基-咪唑分子衍生物之接枝式共軛高分子的合成及其有機光伏電池應用 = Synthesis of Grafted Conjugated Polymers with Pendant 3,4,9,10-Perylenetetracarboxylic Dianhydride and Phenanthrenyl-Imidazole Moieties for Organic Photovoltaic Cell Applications
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: Synthesis of Grafted Conjugated Polymers with Pendant 3,4,9,10-Perylenetetracarboxylic Dianhydride and Phenanthrenyl-Imidazole Moieties for Organic Photovoltaic Cell Applications
    作者: 張弘達,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2013[民102]
    面頁冊數: 160面圖,表格 : 30公分;
    標題: 太陽能電池
    標題: solar cell
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/65602117477166684890
    附註: 參考書目:面140-146
    附註: 102年10月31日公開
    摘要註: 本論文主要目的在於合成二種低能隙(low band gap)之活性層電子給體(electron donor)材料,苝四羧酸酐及菲基-咪唑分子衍生物之接枝式共軛高分子,藉共軛高分子給體之側鏈接上一平面型共軛高分子電子受體之改進方法,降低共軛高分子之能隙,增加吸光波長的寬度,且以此新型之電子給體材料與富勒烯衍生物6,6-苯基-C61丁酸甲酯(PC61BM)混摻做為活性層製成太陽能電池,並與聚(3-己基噻吩)與富勒烯衍生物PC61BM的本體異質接面混摻型太陽能電池做效率之比較。本論文分成三部份,第一部分為合成太陽能電池元件構造層材料:活性層(ative layer)材料。第二部分利用紅外線光譜(FT-IR)料之分子量及其聚合分佈指數值 (PDI),以紫外-可見光光譜 (UV- Vis)及螢光光譜 (PL)觀察光電材料之光學性質及能隙後,可由循環伏安圖譜 (CV)估算出光電材料之最高滿軌域 (HOMO)能量及最低空軌域 (LUMO)能量,並以熱示差掃瞄卡計 (DSC)分析出材料之熱性質。第三部分使用上述合成的光電材料應用於高分子本體異質結太陽能電池元件,並進行光電轉換效率的量測,得到下述結果。以ITO/PEDOT:PSS/PTATP或PTBTP:PCBM/Al為元件構造,在室溫AM1.5擬太陽光源下測得光電轉換效率分別為0.20%與0.13%。以紫外-可見光光譜、螢光光譜及原子力顯微鏡 (AFM)觀察活性層在不同退火溫度下之特徵及相分離型態,並量測其元件光電轉換效率,發現當PTATP:PCBM退火條件為150℃/30 min時,有最高光電轉換有最佳的效率值0.53 %和外部量子效率值11.2% (520 nm處);PTBTP退火條件為175℃/30min時,有最佳的效率值0.26%和外部量子效率值16.4 % (642 nm處)。 The main purpose of this research is to synthesize two types of low band gap electron donor materials for the active layer of solar cells. The two polymers are grafted copolymers with electron donor parts in the main chain and 3,4,9,10-perylenetetracarboxylic dianhydride and phenanthrenyl-imidazole moieties as the pendant, respectively. Both pendants are planar conjugated moieties which are used as electron acceptors of the copolymers. By the introduction of planar structures, both grafted copolymers have low band gaps and can absorb broader wavelength of sunlight. These conjugated copolymers were blended with phenyl-C61-butyric acid methyl ester (PC61BM) to form the active layer. Solar cells composed of the newly developed active layer were compared with those bulk heterojunction (BHJ) polymer solar cells (PSCs) based on P3HT:PCBM for power conversion efficiencies (PCEs).Our study was divided into three parts. The first part was to synthesize the donor materials of both types: PTATP and PTBTP. Subsequently, all synthesized optoelectronic materials were confirmed with FTIR and NMR analyses. Molecular weights and polydispersity indices were obtained by GPC. Optical properties were observed with UV-vis and photoiuminescence (PL) spectra. On the other hand, by the combination of band gap values from UV-vis spectroscopies with the oxidation-reduction potential values from cyclic voltammetry, HOMO and LUMO values of both optoelectronic materials could be estimated. In addition, thermal properties of both synthesized materials were analyzed with thermogravimetric (TGA) and differential scanning calorimetry (DSC).The third part was the application of both of the synthesized materials in the active layers of polymer BHJ solar cells and the measurements of power conversion efficiency. The results are as follows:Based on the ITO/PEDOT:PSS/PTATP or PTBTP:PC61BM/Al device structure, the PCE under the illumination of AM 1.5 (100 mW/cm2) was 0.20% and 0.13%, respectively. In addition, the morphologies of phase separation in the active layer under different thermal annealing conditions were investigated and observed by UV-vis, PL, and AFM. After measuring PCE values, it was concluded that the highest PCE 0.53 % and EQE 11.2% (at 520 nm) of devices based on PTATP could be acquired under the annealing condition at 150℃ for 30 mins;the highest PCE 0.26% and EQE 16.4% (642 nm) of devices based on PTBTP could be acquired under the annealing condition at 175℃ for 30 mins.
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310002391848 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 541208 1113.1 2013 一般使用(Normal) 在架 0
310002391855 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 541208 1113.1 2013 c.2 一般使用(Normal) 在架 0
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