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利用射頻磁控濺鍍沉積12CaO•7Al2O3(C12A7)透明導電膜 =...

國立高雄大學化學工程及材料工程學系碩士班

利用射頻磁控濺鍍沉積12CaO•7Al2O3(C12A7)透明導電膜 = Deposition 12CaO•7Al2O3(C12A7) Transparent Conduction Film by RF Magnetron Sputtering

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Deposition 12CaO•7Al2O3(C12A7) Transparent Conduction Film by RF Magnetron Sputtering
作者:	邱昱涵,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2013[民102]
面頁冊數:	82面圖，表格 : 30公分;
標題:	射頻磁控濺鍍
標題:	RF magnetron sputter
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/05182070987582808127
附註:	參考書目：面69-72
附註:	102年10月31日公開
摘要註:	近幾年來，科技進步快速，在光電產業方面，大量使用到透明導電膜，透明導電膜的材料選擇更是重要。12CaO•7Al2O3(C12A7)本身是水泥材料，具有籠狀結構，經過研究可以使用不同的處理使其具有導電性，C12A7中所使用的氧化鈣與氧化鋁為無毒、低成本具有環境親和力的材料，可說是具有發展潛力的新穎材料。本研究中利用射頻磁控濺鍍法製備12CaO•7Al2O3(C12A7)摻雜氧化銦(Indium)之薄膜(C12A7:0.5In thin film)，濺鍍所使用的基板為康寧玻璃(EagleXG)，改變不同的濺鍍參數來沉積C12A7:0.5In，其中有調整濺鍍氣氛、濺鍍功率、沉積時間以及基板溫度，最後再將沉積C12A7:0.5In薄膜的基板進行氫電漿(H2 plsma)的表面後處理，並針對薄膜之結晶特性、表面形貌、光學性質與導電性質進行研究。根據X-ray繞射分析儀的結果顯示，C12A7:0.5In薄膜改變各參數後成長都不具有方向性，屬於非晶質(Amorphous)薄膜，而掃描式電子顯微鏡的影像也呈現出C12A7:0.5In薄膜表面無結晶，為顆粒堆積的形貌。光學性質的分析中，若是基板經過加溫所沉積的C12A7:0.5In薄膜，在可見光範圍的平均透光率可達80%以上。而導電性質的部分，C12A7:0.5In薄膜屬於p-type薄膜，在濺鍍功率150W時有最低的電阻率。經過氫電漿表面處理的C12A7:0.5In薄膜其結晶特性與表面形貌並無改變，但是透光率和光學能隙都有提高，有Burstin-Moss效應發生，而載子濃度增加，遷移率提升，電阻率也有些微下降。 In recent years, technology is advancing daily. In the optoelectronic industry, extensive using transparent conductive film, so material selection of transparent conductive film became more important. 12CaO•7Al2O3(C12A7) is a cement material, having a cage-like structure. According to the reference, C12A7 could become conductive by different processes. Calcium oxide and alumina oxide are used to compound C12A7 which are non-toxic, low-cost and having environmental affinity. C12A7 is a novel and potential material for transparent conductive film. In this study, using RF magnetron sputtering to deposition 12CaO•7Al2O3(C12A7) doped indium oxide film (C12A7:0.5In thin film). Using Corning glass (EagleXG) for deposition substrate, and different sputter parameters to deposit C12A7:0.5In thin film.Including sputtering atmosphere, RF power, deposition time and substrate temperature, deposition and then finally C12A7: 0.5In thin film was taken a hydrogen plasma(H2 plsma) surface reaction.Then studied film properties such as the crystallization, surface morphology, optical properties and electrical conductivity. According to X-ray diffraction results, C12A7: 0.5In film does not growth crystallized by change the deposition parameters, is amorphous (Amorphous) film. And the scanning electron microscope images also showing that C12A7: 0.5 thin film surface without crystallization, only particles accumulation. Analysis of the optical properties, if the C12A7: 0.5In film is deposited after heating substrate, the average transmittance in visible range could be 80% or more. Analysis of the conductive properties, C12A7: 0.5In thin film is p-type transparent conductive film, it reached the lowest resistivity when the RF power is 150W. After hydrogen plasma surface treatment C12A7: 0.5In film properties and surface morphology had not changed, but the transmittance and optical band gap had improved, Burstin-Moss effect occured. And the carrier concentration increased, mobility enhanced, resistivity decreased slightly.

利用射頻磁控濺鍍沉積12CaO•7Al2O3(C12A7)透明導電膜 = Deposition 12CaO•7Al2O3(C12A7) Transparent Conduction Film by RF Magnetron Sputtering
邱, 昱涵

利用射頻磁控濺鍍沉積12CaO•7Al2O3(C12A7)透明導電膜 = Deposition 12CaO•7Al2O3(C12A7) Transparent Conduction Film by RF Magnetron Sputtering / 邱昱涵撰 - [高雄市] : 撰者, 2013[民102]. - 82面 ; 圖，表格 ; 30公分.
參考書目：面69-72102年10月31日公開.
射頻磁控濺鍍RF magnetron sputter

利用射頻磁控濺鍍沉積12CaO•7Al2O3(C12A7)透明導電膜 = Deposition 12CaO•7Al2O3(C12A7) Transparent Conduction Film by RF Magnetron Sputtering
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200 1 $a 利用射頻磁控濺鍍沉積12CaO•7Al2O3(C12A7)透明導電膜 $d Deposition 12CaO•7Al2O3(C12A7) Transparent Conduction Film by RF Magnetron Sputtering $z eng $f 邱昱涵撰
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328 $a 碩士論文--國立高雄大學化學工程及材料工程學系碩士班
330 $a 近幾年來，科技進步快速，在光電產業方面，大量使用到透明導電膜，透明導電膜的材料選擇更是重要。12CaO•7Al2O3(C12A7)本身是水泥材料，具有籠狀結構，經過研究可以使用不同的處理使其具有導電性，C12A7中所使用的氧化鈣與氧化鋁為無毒、低成本具有環境親和力的材料，可說是具有發展潛力的新穎材料。本研究中利用射頻磁控濺鍍法製備12CaO•7Al2O3(C12A7)摻雜氧化銦(Indium)之薄膜(C12A7:0.5In thin film)，濺鍍所使用的基板為康寧玻璃(EagleXG)，改變不同的濺鍍參數來沉積C12A7:0.5In，其中有調整濺鍍氣氛、濺鍍功率、沉積時間以及基板溫度，最後再將沉積C12A7:0.5In薄膜的基板進行氫電漿(H2 plsma)的表面後處理，並針對薄膜之結晶特性、表面形貌、光學性質與導電性質進行研究。根據X-ray繞射分析儀的結果顯示，C12A7:0.5In薄膜改變各參數後成長都不具有方向性，屬於非晶質(Amorphous)薄膜，而掃描式電子顯微鏡的影像也呈現出C12A7:0.5In薄膜表面無結晶，為顆粒堆積的形貌。光學性質的分析中，若是基板經過加溫所沉積的C12A7:0.5In薄膜，在可見光範圍的平均透光率可達80%以上。而導電性質的部分，C12A7:0.5In薄膜屬於p-type薄膜，在濺鍍功率150W時有最低的電阻率。經過氫電漿表面處理的C12A7:0.5In薄膜其結晶特性與表面形貌並無改變，但是透光率和光學能隙都有提高，有Burstin-Moss效應發生，而載子濃度增加，遷移率提升，電阻率也有些微下降。 In recent years, technology is advancing daily. In the optoelectronic industry, extensive using transparent conductive film, so material selection of transparent conductive film became more important. 12CaO•7Al2O3(C12A7) is a cement material, having a cage-like structure. According to the reference, C12A7 could become conductive by different processes. Calcium oxide and alumina oxide are used to compound C12A7 which are non-toxic, low-cost and having environmental affinity. C12A7 is a novel and potential material for transparent conductive film. In this study, using RF magnetron sputtering to deposition 12CaO•7Al2O3(C12A7) doped indium oxide film (C12A7:0.5In thin film). Using Corning glass (EagleXG) for deposition substrate, and different sputter parameters to deposit C12A7:0.5In thin film.Including sputtering atmosphere, RF power, deposition time and substrate temperature, deposition and then finally C12A7: 0.5In thin film was taken a hydrogen plasma(H2 plsma) surface reaction.Then studied film properties such as the crystallization, surface morphology, optical properties and electrical conductivity. According to X-ray diffraction results, C12A7: 0.5In film does not growth crystallized by change the deposition parameters, is amorphous (Amorphous) film. And the scanning electron microscope images also showing that C12A7: 0.5 thin film surface without crystallization, only particles accumulation. Analysis of the optical properties, if the C12A7: 0.5In film is deposited after heating substrate, the average transmittance in visible range could be 80% or more. Analysis of the conductive properties, C12A7: 0.5In thin film is p-type transparent conductive film, it reached the lowest resistivity when the RF power is 150W. After hydrogen plasma surface treatment C12A7: 0.5In film properties and surface morphology had not changed, but the transmittance and optical band gap had improved, Burstin-Moss effect occured. And the carrier concentration increased, mobility enhanced, resistivity decreased slightly.
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