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氨基矽烷輔助奈米粒子組裝在奈米晶體記憶體的應用 = The applic...
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國立高雄大學化學工程及材料工程學系碩士班

 

  • 氨基矽烷輔助奈米粒子組裝在奈米晶體記憶體的應用 = The application of APTMS-mediated nanoparticles assembly on nanocrystal memory
  • Record Type: Language materials, printed : monographic
    Paralel Title: The application of APTMS-mediated nanoparticles assembly on nanocrystal memory
    Author: 黃聖夫,
    Secondary Intellectual Responsibility: 國立高雄大學
    Place of Publication: [高雄市]
    Published: 撰者;
    Year of Publication: 2013[民102]
    Description: 160面圖,表 : 30公分;
    Subject: 金奈米粒子
    Subject: Au NPs
    Online resource: http://handle.ncl.edu.tw/11296/ndltd/22469304499426749485
    Notes: 104年10月31日公開
    Notes: 參考書目：面133-140
    Summary: 近幾年，傳統快閃記憶體與SONOS記憶體，為了達到元件高密集度和寫入/抹除速度快，往往面臨尺寸微縮時，而產生大量漏電流，為了解決這個問題，奈米晶體記憶體才被提出。本論文利用丙基胺三過氧甲基矽烷(APTMS)自組裝方式，製備出金和白金奈米晶體記憶體之元件，並討論APTMS自組裝層數對奈米粒子的熱穩定性和電性之影響。本論文中記憶體結構以溶凝膠法合成之二氧化鉿作為穿隧氧化層，接著自組裝不同APTMS層數來吸附化學溶液還原法合成的奈米粒子，再覆蓋不同層數的APTMS於基板上，最後再鍍置溶凝膠法合成之二氧化鉿作為控制氧化層以建構奈米晶體記憶體結構，研究中探討實驗參數有:(1)金和白金奈米晶體記憶體特性比較，(2)自組裝APTMS層數對粒子熱穩定性及記憶元件特性的影響，(3)覆蓋APTMS層數對粒子熱穩定性及記憶元件特性的影響，(4) 以APTMS覆蓋層輔助二氧化鉿析出效應，以及(5) 形成多層(multilayer)奈米粒子之結構的記憶元件特性。從實驗結果可知，(1)白金奈米粒子作為奈米晶體記憶體中的電荷儲存中心，比金奈米粒子可儲存較多電荷；(2)自組裝APTMS層數越多對粒子吸覆量越多，所能儲存電荷也較多；(3)覆蓋APTMS層數越多，粒子的熱穩定性越好，並有較佳的電荷保持力；(4)以覆蓋於粒子上的APTMS析出二氧化鉿，則可以降低電荷流失以改善電荷保持力；(5)多層奈米粒子結構可得增加電荷儲存量，且更能降低電荷流失特性以改善電荷保持力。 In recent years, the nanocrystal (NCs) memory has attracted much research attention because of its Program/ Erase speed is faster and lower leakage current for scaling limitation than the conventional flash memory and SONOS (silicon-oxide-nitride-oxide-silicon). In this work, we fabricated gold and platinum NCs memory by self assembled method (SAM) of 3-aminopropyltrimethoxysilane (APTMS), and discussed thermal stability and electrical property of nanoparticles (NPs). Firstly, silicon substrate were covered by spin coating of sol-gel-synthesized HfO2 tunnel oxide layer (~8 nm), then the NPs SAM on hafnium oxide substrates by APTMS. After previous steps, the NPs were capped by spin coating of APTMS layer. Finally, the samples were covered by spin coating of sol-gel-synthesized HfO2 control oxide layer (~13 nm) to construct Metal-Silica core-shell NCs memory. In this study, we discussed several phenomenons : (1) different electrical properties in NCs memory, (2) physical properties of the SAM on different layers of APTMS, (3) physical properties of the covered different numbers of APTMS layers, (4) the HfO2 were precipitated by amino functional group of APTMS, (5) the electrical property of multilayers on NPs memory. In the results of the electrical property : (1) the Pt NPs could stored more charges as trap center than the Au NPs, (2) the amounts of NPs were adsorption more on the APTMS and stored more charge by SAM more APTMS, (3) the NPs had better thermal stability and retention by covering more APTMS layers, (4) the electrical properties were improved when the HfO2 were precipitated by amino group of APTMS, (5) this device could store more charge and improved the retention property by forming the multilayers structure.
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310002565433 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 541208 4415 2013 一般使用(Normal) On shelf 0
310002565441 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 541208 4415 2013 c.2 一般使用(Normal) On shelf 0
  • 2 records • Pages 1 •
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