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霧化學氣相沉積法製備銦氮共摻的氧化鋅薄膜之研究 = Investigat...

吳易達

霧化學氣相沉積法製備銦氮共摻的氧化鋅薄膜之研究 = Investigation of In-N Codoped Zinc Oxide Films by Mist Chemical Vapor Deposition

Record Type:	Language materials, printed : monographic
Paralel Title:	Investigation of In-N Codoped Zinc Oxide Films by Mist Chemical Vapor Deposition
Author:	吳易達,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2013[民102]
Description:	85面圖，表格 : 30公分;
Subject:	銦氮共摻雜
Subject:	In
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/54637922313342605873
Notes:	參考書目：面71-76
Notes:	102年10月31日公開
Summary:	本論文以霧化學氣相沉積法製作銦氮共摻的氧化鋅薄膜，探討不同氣流與位置對形成薄膜電性的差異。經由適當的參數，在n型Si基板上製成的p型銦氮共摻的氧化鋅，薄膜厚度390nm，片電荷濃度7.5×1014 cm-2、遷移率3.5 cm2V-1s-1。隨著薄膜厚度增加，薄膜表面形貌與晶體品質皆有所改變。同時在玻璃基板和不同表面氧化程度的Si基板上沉積此銦氮共摻的氧化鋅薄膜，薄膜的電性隨著此基板氧化程度不同而變化。藉由紫外光與紅外光照射下的電流變化，探討這些氧化鋅薄膜電性差異的原因。 In this thesis, we deposit the In,N codoped zinc oxide thin film by mist chemical vapor deposition with different gas inlet position and flow rate. The p type In,N codoped ZnO with thickness 390nm, sheet carrier concentration7.5×1014 cm-2 and mobility 3.5 cm2V-1s-1 can be achieved on n type Si substrate with certain parameters. With film thickness increases by increasing the deposition time, film morphology and crystalline quality varies. The codoped films were also been deposited on glass substrate and different oxidized n-type Si substrate. The film morphology, crystalline quality and electrical properties were characterized. The film dark current and photo current variance under UV and IR light illuminations were studied to investigate the electrical property originals of these ZnO films.

霧化學氣相沉積法製備銦氮共摻的氧化鋅薄膜之研究 = Investigation of In-N Codoped Zinc Oxide Films by Mist Chemical Vapor Deposition
吳, 易達

霧化學氣相沉積法製備銦氮共摻的氧化鋅薄膜之研究 = Investigation of In-N Codoped Zinc Oxide Films by Mist Chemical Vapor Deposition / 吳易達撰 - [高雄市] : 撰者, 2013[民102]. - 85面 ; 圖，表格 ; 30公分.
參考書目：面71-76102年10月31日公開.
銦氮共摻雜In

霧化學氣相沉積法製備銦氮共摻的氧化鋅薄膜之研究 = Investigation of In-N Codoped Zinc Oxide Films by Mist Chemical Vapor Deposition
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200 1 $a 霧化學氣相沉積法製備銦氮共摻的氧化鋅薄膜之研究 $d Investigation of In-N Codoped Zinc Oxide Films by Mist Chemical Vapor Deposition $z eng $f 吳易達撰
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300 $a 參考書目：面71-76
300 $a 102年10月31日公開
314 $a 指導教授：藍文厚博士，郭馨徽博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本論文以霧化學氣相沉積法製作銦氮共摻的氧化鋅薄膜，探討不同氣流與位置對形成薄膜電性的差異。經由適當的參數，在n型Si基板上製成的p型銦氮共摻的氧化鋅，薄膜厚度390nm，片電荷濃度7.5×1014 cm-2、遷移率3.5 cm2V-1s-1。隨著薄膜厚度增加，薄膜表面形貌與晶體品質皆有所改變。同時在玻璃基板和不同表面氧化程度的Si基板上沉積此銦氮共摻的氧化鋅薄膜，薄膜的電性隨著此基板氧化程度不同而變化。藉由紫外光與紅外光照射下的電流變化，探討這些氧化鋅薄膜電性差異的原因。 In this thesis, we deposit the In,N codoped zinc oxide thin film by mist chemical vapor deposition with different gas inlet position and flow rate. The p type In,N codoped ZnO with thickness 390nm, sheet carrier concentration7.5×1014 cm-2 and mobility 3.5 cm2V-1s-1 can be achieved on n type Si substrate with certain parameters. With film thickness increases by increasing the deposition time, film morphology and crystalline quality varies. The codoped films were also been deposited on glass substrate and different oxidized n-type Si substrate. The film morphology, crystalline quality and electrical properties were characterized. The film dark current and photo current variance under UV and IR light illuminations were studied to investigate the electrical property originals of these ZnO films.
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610 0 $a 銦氮共摻雜 $a 霧化學氣相沉積法 $a p型氧化鋅
610 1 $a In $a N codoped $a Mist Chemical Vapor Deposition $a p-type ZnO
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