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CIGS/Si/Ge多接面堆疊式太陽能電池之理論計算與模擬 = Theo...

國立高雄大學應用物理學系碩士班

CIGS/Si/Ge多接面堆疊式太陽能電池之理論計算與模擬 = Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells

Record Type:	Language materials, printed : monographic
Paralel Title:	Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells
Author:	陳彥宇,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	高雄市
Published:	國立高雄大學;
Year of Publication:	2013[民102]
Description:	115葉圖，表格 : 30公分;
Subject:	多接面堆疊式太陽能電池
Subject:	multi-junction tandem solar-cell
Online resource:	https://hdl.handle.net/11296/x9s89g
Notes:	107年11月1日公開
Notes:	參考書目：葉114-115
Summary:	本論文由半導體基本公式以推導太陽能電池模型中每一層的n-type與p-type中性區的少數載子濃度和電流密度分佈和模擬在太陽光全頻譜下照射，首先以CIGS為材料分析單接面太陽能電池特性，其轉換效率約29.5%。再來模擬雙接面的銅銦鎵硒/矽堆疊式太陽電池，上層厚度約0.745μm，基板厚度約為210μm，最佳轉換效率約38.5%。而在多接面銅銦鎵硒/矽/鍺堆疊式太陽能電池當CIGS能隙為1.4時計算出，上層材料厚度約0.44μm，中層材料厚度約57.8μm，基板厚度約255μm，有最佳轉換效率約47%。最後分析各種元件的特性參數，如摻雜濃度、少數載子生存期、表面復合速率等，對太陽能電池轉換效率的影響。 In this work, by using the basic equations of semiconductors, we calculate the space distribution of minority carrier density and current density in each layer quasi-neutral region of solar-cell devices with full solar spectrum. Firstly, we study the characteristics of single-junction solar cell with CIGS materials 29.5% of the solar cell conversion efficiency is obtained. Secondly, double-junction CIGS/Si tandem solar cells are simulated with top layer thickness of about 0.745μm, and substrate thickness of about 210μm. These solar cells are shown to have the maximum efficiency of about 38.5%. Thirdly, calculation of triple-junction CIGS/Si/Ge tandem solar cells, with top layer thickness of about 0.44μm, the middle layer thickness of 57.8μm, and the substrate thickness of about 255μm is shown to have the best conversion efficiency of about 47%. Finally, various physical parameters are simulated to study their effects on the solar cells conversion efficiency. These parameters include the diffusion density, minority carrier lifetime, and surfacerecombination velocity.

CIGS/Si/Ge多接面堆疊式太陽能電池之理論計算與模擬 = Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells
陳, 彥宇

CIGS/Si/Ge多接面堆疊式太陽能電池之理論計算與模擬 = Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells / 陳彥宇撰 - 高雄市 : 國立高雄大學, 2013[民102]. - 115葉 ; 圖，表格 ; 30公分.
107年11月1日公開參考書目：葉114-115.
多接面堆疊式太陽能電池multi-junction tandem solar-cell

CIGS/Si/Ge多接面堆疊式太陽能電池之理論計算與模擬 = Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells
LDR:03028nam a2200277 450 001 389750
005 20190102102711.0
010 0 $b 精裝
010 0 $b 平裝
100 $a 20130926y2013 k y0chiy50 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a CIGS/Si/Ge多接面堆疊式太陽能電池之理論計算與模擬 $d Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells $z eng $f 陳彥宇撰
210 $a 高雄市 $c 國立高雄大學 $d 2013[民102]
215 0 $a 115葉 $c 圖，表格 $d 30公分
300 $a 107年11月1日公開
300 $a 參考書目：葉114-115
314 $a 指導教授：蔡進譯博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 本論文由半導體基本公式以推導太陽能電池模型中每一層的n-type與p-type中性區的少數載子濃度和電流密度分佈和模擬在太陽光全頻譜下照射，首先以CIGS為材料分析單接面太陽能電池特性，其轉換效率約29.5%。再來模擬雙接面的銅銦鎵硒/矽堆疊式太陽電池，上層厚度約0.745μm，基板厚度約為210μm，最佳轉換效率約38.5%。而在多接面銅銦鎵硒/矽/鍺堆疊式太陽能電池當CIGS能隙為1.4時計算出，上層材料厚度約0.44μm，中層材料厚度約57.8μm，基板厚度約255μm，有最佳轉換效率約47%。最後分析各種元件的特性參數，如摻雜濃度、少數載子生存期、表面復合速率等，對太陽能電池轉換效率的影響。 In this work, by using the basic equations of semiconductors, we calculate the space distribution of minority carrier density and current density in each layer quasi-neutral region of solar-cell devices with full solar spectrum. Firstly, we study the characteristics of single-junction solar cell with CIGS materials 29.5% of the solar cell conversion efficiency is obtained. Secondly, double-junction CIGS/Si tandem solar cells are simulated with top layer thickness of about 0.745μm, and substrate thickness of about 210μm. These solar cells are shown to have the maximum efficiency of about 38.5%. Thirdly, calculation of triple-junction CIGS/Si/Ge tandem solar cells, with top layer thickness of about 0.44μm, the middle layer thickness of 57.8μm, and the substrate thickness of about 255μm is shown to have the best conversion efficiency of about 47%. Finally, various physical parameters are simulated to study their effects on the solar cells conversion efficiency. These parameters include the diffusion density, minority carrier lifetime, and surfacerecombination velocity.
510 1 $a Theoretical calculation and simulation of CIGS/Si/Ge multi-junction tandem solar cells $z eng
610 # 0 $a 多接面堆疊式太陽能電池 $a 計算模擬 $a 理論模型
610 # 1 $a multi-junction tandem solar-cell $a simulation $a theo
681 $a 008M/0019 $b 423203 7503.1 $v 2007年版
700 1 $a 陳 $b 彥宇 $4 撰 $3 614607
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b 國立高雄大學 $c 20181115 $g CCR
856 7 # $u https://hdl.handle.net/11296/x9s89g $z 電子資源 $2 http