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非極化a平面氮化鎵電子與原子結構研究 = Investigate the...

國立高雄大學應用物理學系碩士班

非極化a平面氮化鎵電子與原子結構研究 = Investigate the electronic and atomic structures of nonpolar a-plane GaN thin films

Record Type:	Language materials, printed : monographic
Paralel Title:	Investigate the electronic and atomic structures of nonpolar a-plane GaN thin films
Author:	謝一正,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2013[民102]
Description:	67面圖，表格 : 30公分;
Subject:	XRD
Subject:	XRD
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/74583566271563682415
Notes:	參考書目：面54-58
Notes:	102年10月31日公開
Summary:	利用Metal-organic Chemical Vapor Deposition（MOCVD）的方法在γ-Al2O3基板上成長a-plane GaN薄膜可以克服以往在成長c-plane GaN時存在的Quantum-confined Stark effect（QCSE）效應。樣品在製備過程中施加了不同的V/III ratio及厚度的緩衝層。本論文利用X-ray diffraction （XRD）、拉曼散射（Raman scattering）及X光吸收近邊緣結構（x-ray absorption near-edge structure，XANES）探討不同V/III ratio及厚度的緩衝層對a-plane GaN薄膜的電子與原子結構特性的影響。在原子結構方面，經由XRD及拉曼散射實驗分析，發現樣品在改變V/III ratio 及其厚度後可使樣品GaN（11 0）的orientation提高。在電子結構量測方面，利用同步輻射具有偏振的特性，量測不同方向上的電子結構並討論其差異性，發現緩衝層的施加會使得a-plane GaN的原子結構趨向strain free，而緩衝層的V/III ratio不同時，則會使得表面效應發生或者缺陷增加。 This study implemented a combination of atomic force microscope (AFM), X-ray diffraction pattern (XRD), Raman spectroscopy, and X-ay absorption near-edge structure (XANES) spectroscopy to investigate the relationship between the luminant properties, crystallography, and electronic structure of nonpolar a-GaN thin films. The nonpolar a-plane GaN thin films grown on γ-Al2O3 prepared by MOCVD (Metal-organic Chemical Vapor Deposition) method have the capabilities to overcome the QCSE (Quantum-confined Stark effect) existed in c-plane GaN thin films. The discrete V/III ratios and the thicknesses of the buffer layer are the variables during the sample preparation process. The XRD results show that the (11 0) orientation of the nonpolar a-GaN thin films depends on the thickness of the buffer layer is in agreement with the results of the Raman spectra. The XANES results suggest that the surface effect of the a-GaN thin films increased as the thickness of 1-st step a-GaN buffer layer increased. However, the N 2p-Ga 4sp antibonding coupling reduced with the decreased of the V/III ratio. Moreover, the amount of the N 2p-Ga 3d hybridization is not the factor to influence the electronic structure of nonpolar a-GaN thin films.

非極化a平面氮化鎵電子與原子結構研究 = Investigate the electronic and atomic structures of nonpolar a-plane GaN thin films
謝, 一正

非極化a平面氮化鎵電子與原子結構研究 = Investigate the electronic and atomic structures of nonpolar a-plane GaN thin films / 謝一正撰 - [高雄市] : 撰者, 2013[民102]. - 67面 ; 圖，表格 ; 30公分.
參考書目：面54-58102年10月31日公開.
XRDXRD

非極化a平面氮化鎵電子與原子結構研究 = Investigate the electronic and atomic structures of nonpolar a-plane GaN thin films
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330 $a 利用Metal-organic Chemical Vapor Deposition（MOCVD）的方法在γ-Al2O3基板上成長a-plane GaN薄膜可以克服以往在成長c-plane GaN時存在的Quantum-confined Stark effect（QCSE）效應。樣品在製備過程中施加了不同的V/III ratio及厚度的緩衝層。本論文利用X-ray diffraction （XRD）、拉曼散射（Raman scattering）及X光吸收近邊緣結構（x-ray absorption near-edge structure，XANES）探討不同V/III ratio及厚度的緩衝層對a-plane GaN薄膜的電子與原子結構特性的影響。在原子結構方面，經由XRD及拉曼散射實驗分析，發現樣品在改變V/III ratio 及其厚度後可使樣品GaN（11 0）的orientation提高。在電子結構量測方面，利用同步輻射具有偏振的特性，量測不同方向上的電子結構並討論其差異性，發現緩衝層的施加會使得a-plane GaN的原子結構趨向strain free，而緩衝層的V/III ratio不同時，則會使得表面效應發生或者缺陷增加。 This study implemented a combination of atomic force microscope (AFM), X-ray diffraction pattern (XRD), Raman spectroscopy, and X-ay absorption near-edge structure (XANES) spectroscopy to investigate the relationship between the luminant properties, crystallography, and electronic structure of nonpolar a-GaN thin films. The nonpolar a-plane GaN thin films grown on γ-Al2O3 prepared by MOCVD (Metal-organic Chemical Vapor Deposition) method have the capabilities to overcome the QCSE (Quantum-confined Stark effect) existed in c-plane GaN thin films. The discrete V/III ratios and the thicknesses of the buffer layer are the variables during the sample preparation process. The XRD results show that the (11 0) orientation of the nonpolar a-GaN thin films depends on the thickness of the buffer layer is in agreement with the results of the Raman spectra. The XANES results suggest that the surface effect of the a-GaN thin films increased as the thickness of 1-st step a-GaN buffer layer increased. However, the N 2p-Ga 4sp antibonding coupling reduced with the decreased of the V/III ratio. Moreover, the amount of the N 2p-Ga 3d hybridization is not the factor to influence the electronic structure of nonpolar a-GaN thin films.
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