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Material and Phonon Engineering for ...

Carnegie Mellon University.

Material and Phonon Engineering for Next Generation Acoustic Devices.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Material and Phonon Engineering for Next Generation Acoustic Devices.
Author:	Kuo, Nai-Kuei.
Description:	96 p.
Notes:	Source: Dissertation Abstracts International, Volume: 75-02(E), Section: B.
Notes:	Adviser: Gianluca Piazza.
Contained By:	Dissertation Abstracts International75-02B(E).
Subject:	Engineering, Electronics and Electrical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3575075
ISBN:	9781303526084

Material and Phonon Engineering for Next Generation Acoustic Devices.
Kuo, Nai-Kuei.

Material and Phonon Engineering for Next Generation Acoustic Devices. - 96 p.

Source: Dissertation Abstracts International, Volume: 75-02(E), Section: B.

Thesis (Ph.D.)--Carnegie Mellon University, 2013.

This thesis presents the theoretical and experimental work related to micromachining of low intrinsic loss sapphire and phononic crystals for engineering new classes of electroacoustic devices for frequency control applications.

ISBN: 9781303526084Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

Material and Phonon Engineering for Next Generation Acoustic Devices.
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020 $a 9781303526084
035 $a (MiAaPQ)AAI3575075
035 $a AAI3575075
040 $a MiAaPQ $c MiAaPQ
100 1 $a Kuo, Nai-Kuei. $3 660345
245 1 0 $a Material and Phonon Engineering for Next Generation Acoustic Devices.
300 $a 96 p.
500 $a Source: Dissertation Abstracts International, Volume: 75-02(E), Section: B.
500 $a Adviser: Gianluca Piazza.
502 $a Thesis (Ph.D.)--Carnegie Mellon University, 2013.
520 $a This thesis presents the theoretical and experimental work related to micromachining of low intrinsic loss sapphire and phononic crystals for engineering new classes of electroacoustic devices for frequency control applications.
520 $a For the first time, a low loss sapphire suspended membrane was fabricated and utilized to form the main body of a piezoelectric lateral overtone bulk acoustic resonator (LOBAR). Since the metalized piezoelectric transducer area in a LOBAR is only a small fraction of the overall resonant cavity (made out of sapphire), high quality factor (Q) overtones are attained. The experiment confirms the low intrinsic mechanical loss of the transferred sapphire thin film, and the resonators exhibit the highest Q of 5,440 at 2.8 GHz ( f·Q of 1.53.1013 Hz). This is also the highest f·Q demonstrated for aluminum-nitride-(AIN)-based Lamb wave devices to date. Beyond demonstrating a low loss device, this experimental work has laid the foundation for the future development of new micromechanical devices based on a high Q, high hardness and chemically resilient material.
520 $a The search for alternative ways to more efficiently perform frequency control functionalities lead to the exploration of Phononic Crystal (PnC) structures in AIN thin films. Four unit cell designs were theoretically and experimentally investigated to explore the behavior of phononic bandgaps (PBGs) in the ultra high frequency (UHF) range: (i) the conventional square lattice with circular air scatterer, (ii) the inverse acoustic bandgap (IABG) structure, (iii) the fractal PnC, and (iv) the X-shaped PnC. Each unit cell has its unique frequency characteristic that was exploited to synthesize either cavity resonators or improve the performance of acoustic delay lines. The PBGs operate in the range of 770 MHz to 1 GHz and exhibit a maximum acoustic rejection of 40 dB. AIN Lamb wave transducers (LWTs) were employed for the experimental demonstration of the PBGs and cavity resonances. Ultra-wide bandwidth (&sim;10%) was achieved by implementing slanted finger transducers (SFIT) in thin film AIN. The impulse response and coupling of modes (COM) models commonly used for surface acoustic wave (SAW) devices were developed to design the operating frequency and bandwidth of the LWTs. These techniques enabled access to fast frequency solutions (impulse response method) and good pass-band ripple estimation (COM) for any piezoelectric Lamb-wave based device. The conventional and IABG unit cell designs were explored for the making of cavity resonators. A PnC cavity made with conventional design exhibits a Q of 675 at 665 MHz. Despite the low Q, its value is very high when the volume of the cavity is taken into account ( Q per unit volume of 3.1017/m3). In order to understand the limited value of Q a detailed finite element analysis is performed to unveil its dependence on the specific design of the transducer. The capabilities of the X-shaped PnCs were harvested for synthesizing a method to suppress the sidelobe response of an AIN Lamb wave (SFIT) delay line. 10 dB of sidelobe magnitude reduction was attained while leaving the pass-band unaltered.
520 $a Although at a very preliminary stage, the theoretical and experimental work on AIN PnC has demonstrated that new acoustic capabilities are enabled by these metamaterials. Future electroacoustic devices that perform frequency control functions in a compact and low loss fashion can now be envisioned.
590 $a School code: 0041.
650 4 $a Engineering, Electronics and Electrical. $3 226981
650 4 $a Physics, Acoustics. $3 227297
650 4 $a Engineering, Mechanical. $3 212470
650 4 $a Physics, Condensed Matter. $3 226939
690 $a 0544
690 $a 0986
690 $a 0548
690 $a 0611
710 2 $a Carnegie Mellon University. $b Electrical and Computer Engineering. $3 660346
773 0 $t Dissertation Abstracts International $g 75-02B(E).
790 $a 0041
791 $a Ph.D.
792 $a 2013
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3575075

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