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WLCSP 製程Flux殘留之研究 = Research of The ...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

WLCSP 製程Flux殘留之研究 = Research of The Flux Residual in WLCSP Process

Record Type:	Language materials, printed : monographic
Paralel Title:	Research of The Flux Residual in WLCSP Process
Author:	林士淵,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	45葉圖，表格 : 30公分;
Subject:	助焊劑殘留
Subject:	Flux residual
Online resource:	https://hdl.handle.net/11296/ybhj37
Notes:	108年3月25日公開
Notes:	參考書目：葉45
Summary:	本論文主要針對晶元尺寸封裝(WLCSP)製程中Flux 殘留問題的探討及製程改進之研究，本研究採用工程分析法，以WLCSP植球製程為探討對象，分析結果顯示：Flux 殘留與迴焊爐的潔淨度有密切相關性，所得之實驗數據並使用電子顯微鏡及電子能譜元素分析(SEM / EDEX)為檢測工具，找到Flux殘留的原因，最後依本研究結論提出WLCSP製程中FLUX殘留問題的有效解決方法。 The objective of this thesis is to explore the failure mode of flux residual in wafer level chip scale package (WLCSP) process, and to develop process control parameters to improve the liability of the WLCSP products. A process optimization method was utilized to analyze factors which releted with the cause of flux residual in WLCSP process. In addition, scanning electron microscopy and electron stimulated X-ray spectrum analyzer were used to verify the causes of the flux residual. As a conclusion, a sealed reflow environment was invented to eliminate the containmination of particulated fibers and to improve the liability of the WLCSP releated products effectivelly.

WLCSP 製程Flux殘留之研究 = Research of The Flux Residual in WLCSP Process
林, 士淵

WLCSP 製程Flux殘留之研究 = Research of The Flux Residual in WLCSP Process / 林士淵撰 - [高雄市] : 撰者, 2014[民103]. - 45葉 ; 圖，表格 ; 30公分.
108年3月25日公開參考書目：葉45.
助焊劑殘留Flux residual

WLCSP 製程Flux殘留之研究 = Research of The Flux Residual in WLCSP Process
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314 $a 指導教授：施明昌博士
328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 本論文主要針對晶元尺寸封裝(WLCSP)製程中Flux 殘留問題的探討及製程改進之研究，本研究採用工程分析法，以WLCSP植球製程為探討對象，分析結果顯示：Flux 殘留與迴焊爐的潔淨度有密切相關性，所得之實驗數據並使用電子顯微鏡及電子能譜元素分析(SEM / EDEX)為檢測工具，找到Flux殘留的原因，最後依本研究結論提出WLCSP製程中FLUX殘留問題的有效解決方法。 The objective of this thesis is to explore the failure mode of flux residual in wafer level chip scale package (WLCSP) process, and to develop process control parameters to improve the liability of the WLCSP products. A process optimization method was utilized to analyze factors which releted with the cause of flux residual in WLCSP process. In addition, scanning electron microscopy and electron stimulated X-ray spectrum analyzer were used to verify the causes of the flux residual. As a conclusion, a sealed reflow environment was invented to eliminate the containmination of particulated fibers and to improve the liability of the WLCSP releated products effectivelly.
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