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WLCSP電鍍蝕刻製程鈦蝕刻液選擇之研究 = The research ...

劉柏為

WLCSP電鍍蝕刻製程鈦蝕刻液選擇之研究 = The research for titanium etchant on WLCSP plating process

Record Type:	Language materials, printed : monographic
Paralel Title:	The research for titanium etchant on WLCSP plating process
Author:	劉柏為,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	84面圖，表 : 30公分;
Subject:	XPS
Subject:	XPS
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/73081696340496304729
Notes:	參考書目：面71-72
Notes:	103年12月16日公開
Summary:	本論文探討WLCSP電鍍之後續濕蝕刻製程中，蝕刻能力不足所造成的金屬殘留問題及其相關良率損失現象，將以不同的濕蝕刻液，藉由改變蝕刻時間等製程參數，並搭配後續電漿清潔製程，藉此提升金屬的移除能力。在各製程完成後，確認各個品質指標，並於濕蝕刻後，以XPS檢驗晶圓表面，進行表面元素的確認，確定金屬薄膜移除的程度，經由不同的結構，以及不同蝕刻情況造成的底切現象，進行討論。並經由實際晶圓的測試，達到改善製程，提升品質的效果。 The thesis is aimed to improve the residual metal phenomenon and yield loss, caused by the lack of enough etching ability in the WLCSP. The whole experiment is conducted in the wet etching process. Different etchants are experimented with different lengths of etch process time as well as plasma cleaning process time so that the ability to remove the metal could be enhanced. After each experiment, an examination on wafer surface with XPS is carried on to confirm the surface elements and define the extent to which the metal film is removed. as wet etching is applied for etching process, with isotropic etching, metal undercut problems would arise. The situation were confirmed with the selection of proper etchant, the actual test for real wafers were carried out to verify the improvement of process quality.

WLCSP電鍍蝕刻製程鈦蝕刻液選擇之研究 = The research for titanium etchant on WLCSP plating process
劉, 柏為

WLCSP電鍍蝕刻製程鈦蝕刻液選擇之研究 = The research for titanium etchant on WLCSP plating process / 劉柏為撰 - [高雄市] : 撰者, 2014[民103]. - 84面 ; 圖，表 ; 30公分.
參考書目：面71-72103年12月16日公開.
XPSXPS

WLCSP電鍍蝕刻製程鈦蝕刻液選擇之研究 = The research for titanium etchant on WLCSP plating process
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330 $a 本論文探討WLCSP電鍍之後續濕蝕刻製程中，蝕刻能力不足所造成的金屬殘留問題及其相關良率損失現象，將以不同的濕蝕刻液，藉由改變蝕刻時間等製程參數，並搭配後續電漿清潔製程，藉此提升金屬的移除能力。在各製程完成後，確認各個品質指標，並於濕蝕刻後，以XPS檢驗晶圓表面，進行表面元素的確認，確定金屬薄膜移除的程度，經由不同的結構，以及不同蝕刻情況造成的底切現象，進行討論。並經由實際晶圓的測試，達到改善製程，提升品質的效果。 The thesis is aimed to improve the residual metal phenomenon and yield loss, caused by the lack of enough etching ability in the WLCSP. The whole experiment is conducted in the wet etching process. Different etchants are experimented with different lengths of etch process time as well as plasma cleaning process time so that the ability to remove the metal could be enhanced. After each experiment, an examination on wafer surface with XPS is carried on to confirm the surface elements and define the extent to which the metal film is removed. as wet etching is applied for etching process, with isotropic etching, metal undercut problems would arise. The situation were confirmed with the selection of proper etchant, the actual test for real wafers were carried out to verify the improvement of process quality.
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