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不同溫度對n型超薄絕緣層上矽場效電晶體特性和可靠度之研究 = Influ...

國立高雄大學電機工程學系碩士班

不同溫度對n型超薄絕緣層上矽場效電晶體特性和可靠度之研究 = Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature

Record Type:	Language materials, printed : monographic
Paralel Title:	Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature
Author:	葉建宏,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	64面圖，表 : 30公分;
Subject:	UTBB SOI
Subject:	UTBB SOI
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/21903966148396437779
Notes:	參考書目：面48-51
Notes:	103年12月16日公開
Summary:	在元件不斷微縮降低成本下，產生了許多不好的短通道效應，而我們最常使用超薄絕緣層上矽元件來抑制短通道效應，本論文中所使用的正是這種結構的電晶體，另外我們對通道掺雜濃度進行調整避免熱子載效應產生，其掺雜濃度調整方法為輕掺雜汲極和暈型掺雜兩種。我們將分別討論不同電性壓迫的正偏壓下的不穩定性及不同溫度下正偏壓不穩定性和不同溫度下熱載子效應，來探討其元件退化情形。在實驗中我們發現掺雜濃度的高低，影響者元件的基本電性與可靠度，包含次臨界電壓、導通電流、漏電流增加等等，實驗果掺雜濃度較高的元件，在電性壓迫及高溫下電性壓迫，可靠度表現都比較差，反而在高溫下熱載子效應時，掺雜濃度較低的元件可靠度表現較差。 As the devices have been aggressively scaling down, short channel effects (SCEs) become serious problems. In order to avoid short channel effects, the ultra-thin body and buried oxide Silicon-on-Insulator (UTBB SOI) devices were used. Two kinds of dopant concentrations were implanted in the UTBB SOI devices in both S/D extension and halo implantation. Positive bias temperature instability (PBTI) and hot carrier stress (HCS) were used to investigate the reliability of the devices. The PBTI was applied with various voltages and temperatures while the HCS was stressed with different temperatures. It is observed that the variations of dopant concentrations would affect the electric characteristics and reliabilities, such as sub-threshold swing, transconductance and gate leakage current. The high dose devices show the worse performance of reliability under PBTI stress. On the other hand, the worse reliability could be observed for the low dose devices.

不同溫度對n型超薄絕緣層上矽場效電晶體特性和可靠度之研究 = Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature
葉, 建宏

不同溫度對n型超薄絕緣層上矽場效電晶體特性和可靠度之研究 = Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature / 葉建宏撰 - [高雄市] : 撰者, 2014[民103]. - 64面 ; 圖，表 ; 30公分.
參考書目：面48-51103年12月16日公開.
UTBB SOIUTBB SOI

不同溫度對n型超薄絕緣層上矽場效電晶體特性和可靠度之研究 = Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature
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200 1 $a 不同溫度對n型超薄絕緣層上矽場效電晶體特性和可靠度之研究 $d Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature $z eng $f 葉建宏撰
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314 $a 指導教授：葉文冠博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 在元件不斷微縮降低成本下，產生了許多不好的短通道效應，而我們最常使用超薄絕緣層上矽元件來抑制短通道效應，本論文中所使用的正是這種結構的電晶體，另外我們對通道掺雜濃度進行調整避免熱子載效應產生，其掺雜濃度調整方法為輕掺雜汲極和暈型掺雜兩種。我們將分別討論不同電性壓迫的正偏壓下的不穩定性及不同溫度下正偏壓不穩定性和不同溫度下熱載子效應，來探討其元件退化情形。在實驗中我們發現掺雜濃度的高低，影響者元件的基本電性與可靠度，包含次臨界電壓、導通電流、漏電流增加等等，實驗果掺雜濃度較高的元件，在電性壓迫及高溫下電性壓迫，可靠度表現都比較差，反而在高溫下熱載子效應時，掺雜濃度較低的元件可靠度表現較差。 As the devices have been aggressively scaling down, short channel effects (SCEs) become serious problems. In order to avoid short channel effects, the ultra-thin body and buried oxide Silicon-on-Insulator (UTBB SOI) devices were used. Two kinds of dopant concentrations were implanted in the UTBB SOI devices in both S/D extension and halo implantation. Positive bias temperature instability (PBTI) and hot carrier stress (HCS) were used to investigate the reliability of the devices. The PBTI was applied with various voltages and temperatures while the HCS was stressed with different temperatures. It is observed that the variations of dopant concentrations would affect the electric characteristics and reliabilities, such as sub-threshold swing, transconductance and gate leakage current. The high dose devices show the worse performance of reliability under PBTI stress. On the other hand, the worse reliability could be observed for the low dose devices.
510 1 $a Influence of Characteristic and Reliability on UTBB SOI nMOSFETs with different Temperature $z eng
610 0 $a UTBB SOI $a 熱載子效應 $a 輕摻雜汲極 $a 暈型摻雜 $a 摻雜濃度 $a 正偏壓不穩定
610 1 $a UTBB SOI $a Hot Carrier Effect $a lightly doped drain $a halo implantation $a Doping Concentration $a positive bias temperature instability
681 $a 008M/0019 $b 542201 4413.1 $v 2007年版
700 1 $a 葉 $b 建宏 $4 撰 $3 59651
712 0 2 $a 國立高雄大學 $b 電機工程學系碩士班 $3 166118
801 0 $a tw $b NUK $c 20141021 $g CCR
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