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雷射切割常數於低介電常數晶圓之切割研究 = The study of l...

國立高雄大學電機工程學系碩士班

雷射切割常數於低介電常數晶圓之切割研究 = The study of laser cutting technology for Low k wafer

Record Type:	Language materials, printed : monographic
Paralel Title:	The study of laser cutting technology for Low k wafer
Author:	陳育琳,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	55葉圖，表格 : 30公分;
Subject:	晶圓切割
Subject:	Wafer saw
Online resource:	https://hdl.handle.net/11296/56cem2
Notes:	108年3月25日公開
Notes:	參考書目：葉54-55
Summary:	目前次微米的矽元件製程中，採用低介電材料為保護層而這層材料在鑽石切割製程中極易碎裂造成晶粒的不良率。因此本論文之目的在於探討紫外光雷射對於低介電材料晶圓封裝上晶粒切割溝槽結構的改良。本論文中所以在此將用不同的雷射功率、切割速度及脈衝頻率等參數對於切割品質的影響，實驗結果得到雷射功率的大小與雷射切割寬度和深度呈正向關係，雷射頻率的大小與雷射切割寬度和深度也是呈正向關係，雷射速度的快慢則與雷射切割寬度和深度呈反向關係，本論文的結果可以提供未來晶圓尺寸封裝中晶粒切割製程的最佳化參數。 Since low K passivation layer was used in submicron Si device process and it is brittle and easily broken in traditional diamond sawing. The purpose of this thesis is to develop an efficient die cutting technique by using a UV laser. It is found that the depth and width of the cutting is almost linear proportion to laser power and repetition rates, but the depth and width of laser cutting is inversely proportion to cutting speed. In addition a model of laser cutting was suggested to verified the experimental results, and to offer a helpful reference to Si related device packaging.

雷射切割常數於低介電常數晶圓之切割研究 = The study of laser cutting technology for Low k wafer
陳, 育琳

雷射切割常數於低介電常數晶圓之切割研究 = The study of laser cutting technology for Low k wafer / 陳育琳撰 - [高雄市] : 撰者, 2014[民103]. - 55葉 ; 圖，表格 ; 30公分.
108年3月25日公開參考書目：葉54-55.
晶圓切割Wafer saw

雷射切割常數於低介電常數晶圓之切割研究 = The study of laser cutting technology for Low k wafer
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300 $a 參考書目：葉54-55
314 $a 指導教授：施明昌博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 目前次微米的矽元件製程中，採用低介電材料為保護層而這層材料在鑽石切割製程中極易碎裂造成晶粒的不良率。因此本論文之目的在於探討紫外光雷射對於低介電材料晶圓封裝上晶粒切割溝槽結構的改良。本論文中所以在此將用不同的雷射功率、切割速度及脈衝頻率等參數對於切割品質的影響，實驗結果得到雷射功率的大小與雷射切割寬度和深度呈正向關係，雷射頻率的大小與雷射切割寬度和深度也是呈正向關係，雷射速度的快慢則與雷射切割寬度和深度呈反向關係，本論文的結果可以提供未來晶圓尺寸封裝中晶粒切割製程的最佳化參數。 Since low K passivation layer was used in submicron Si device process and it is brittle and easily broken in traditional diamond sawing. The purpose of this thesis is to develop an efficient die cutting technique by using a UV laser. It is found that the depth and width of the cutting is almost linear proportion to laser power and repetition rates, but the depth and width of laser cutting is inversely proportion to cutting speed. In addition a model of laser cutting was suggested to verified the experimental results, and to offer a helpful reference to Si related device packaging.
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