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應用反應曲面法進行凸塊正型黃光塗佈的光阻減量參數最佳化研究 = Phot...

凌東毅

應用反應曲面法進行凸塊正型黃光塗佈的光阻減量參數最佳化研究 = Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology

Record Type:	Language materials, printed : monographic
Paralel Title:	Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology
Author:	凌東毅,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	106面圖，表 : 30公分;
Subject:	凸塊製程
Subject:	Bumping
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/03555470773498443727
Notes:	參考書目：面91-92
Notes:	103年12月16日公開
Summary:	本論文主要是針對凸塊製程中的正型光阻塗佈製程，利用實驗設計手法來達到光阻減量的目的。利用常態分配檢定、變異數檢定及反應曲面法進行一連串的統計分析後，而得到最佳化參數，也了解到對於正型黃光塗佈製程的顯著因子為光阻噴灑時間、主旋轉速度。模擬晶圓使用新參數作業驗證，針對黃光及蝕刻製程的品質項目以統計手法進行分析，客觀地去驗證新參數的作業適用性。最後更以實際晶圓使用新參數作業再次驗證，一樣以統計軟體進行分析，來加強驗證新參數實際做作業的可適性。隨著新參數的導入，在維持原產品作業品質的情況下，光阻減量使用可達45%以上。 This thesis study the photoresist reduction parameter in the bumping positive photo photoresist coating process by response surface methodology. Statistical parameter analysis were carried on by using normal distribution test and analysis of variance test. The significant factors of positive photoresist coat process are photoresist dispense time and major spin speed. Bu using new parameters to process dummy wafer for verified, then compared photo and etch process quality index by statistical analysis, and objective to verify the applicability of the new operating parameters. Lastly we use new parameters to process real wafer and also analyzed by statistical software, to realize the adaptive actual operation of new parameters. Finally, not only will not affect the quality and allows to reduce the amount of 45% of the photoresist after implement new parameters.

應用反應曲面法進行凸塊正型黃光塗佈的光阻減量參數最佳化研究 = Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology
凌, 東毅

應用反應曲面法進行凸塊正型黃光塗佈的光阻減量參數最佳化研究 = Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology / 凌東毅撰 - [高雄市] : 撰者, 2014[民103]. - 106面 ; 圖，表 ; 30公分.
參考書目：面91-92103年12月16日公開.
凸塊製程Bumping

應用反應曲面法進行凸塊正型黃光塗佈的光阻減量參數最佳化研究 = Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology
LDR:02917nam0a2200289 450 001 430202
005 20170214100937.0
009 430202
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214d2014 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 應用反應曲面法進行凸塊正型黃光塗佈的光阻減量參數最佳化研究 $d Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology $z eng $f 凌東毅撰
210 $a [高雄市] $c 撰者 $d 2014[民103]
215 0 $a 106面 $c 圖，表 $d 30公分
300 $a 參考書目：面91-92
300 $a 103年12月16日公開
314 $a 指導教授：藍文厚博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本論文主要是針對凸塊製程中的正型光阻塗佈製程，利用實驗設計手法來達到光阻減量的目的。利用常態分配檢定、變異數檢定及反應曲面法進行一連串的統計分析後，而得到最佳化參數，也了解到對於正型黃光塗佈製程的顯著因子為光阻噴灑時間、主旋轉速度。模擬晶圓使用新參數作業驗證，針對黃光及蝕刻製程的品質項目以統計手法進行分析，客觀地去驗證新參數的作業適用性。最後更以實際晶圓使用新參數作業再次驗證，一樣以統計軟體進行分析，來加強驗證新參數實際做作業的可適性。隨著新參數的導入，在維持原產品作業品質的情況下，光阻減量使用可達45%以上。 This thesis study the photoresist reduction parameter in the bumping positive photo photoresist coating process by response surface methodology. Statistical parameter analysis were carried on by using normal distribution test and analysis of variance test. The significant factors of positive photoresist coat process are photoresist dispense time and major spin speed. Bu using new parameters to process dummy wafer for verified, then compared photo and etch process quality index by statistical analysis, and objective to verify the applicability of the new operating parameters. Lastly we use new parameters to process real wafer and also analyzed by statistical software, to realize the adaptive actual operation of new parameters. Finally, not only will not affect the quality and allows to reduce the amount of 45% of the photoresist after implement new parameters.
510 1 $a Photoresist reduction study of bumping positive photo coating process by Response Surface Methodology $z eng
610 0 $a 凸塊製程 $a 正型光阻塗佈 $a 光阻減量 $a 反應曲面法
610 1 $a Bumping $a Positive Photoresist Coating $a Photoresist Reducetion $a Response Surface Methodology
681 $a 008M/0019 $b 542201 3450 $v 2007年版
700 1 $a 凌 $b 東毅 $4 撰 $3 673418
712 0 2 $a 國立高雄大學 $b 電機工程學系碩士班 $3 166118
801 0 $a tw $b NUK $c 20141021 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/03555470773498443727