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利用ITO導電層於MIS元件製作及其光響應性能研究 = The fabr...

國立高雄大學電機工程學系碩士班

利用ITO導電層於MIS元件製作及其光響應性能研究 = The fabrication and responsivity study of MIS photo-detector by using ITO conductive Layer

Record Type:	Language materials, printed : monographic
Paralel Title:	The fabrication and responsivity study of MIS photo-detector by using ITO conductive Layer
Author:	陳昀駿,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	59面圖，表 : 30公分;
Subject:	氧化銦錫
Subject:	ITO thin film
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/87918273929341079794
Notes:	參考書目：面47-49
Notes:	103年12月16日公開
Summary:	氧化銦錫(ITO)薄膜材料好的導電性，在可見光藍光波長的範圍有高的穿透率，與矽基板有很好的黏著性、材料硬度佳且化學性質穩定，因此ITO薄膜材料很適合應用在光電元件上，本論文主要探討利用ITO薄膜於MIS光偵測元件之製程，實驗使用電子束蒸鍍機(electron beam evaporation ) 蒸鍍ITO/SiO2薄膜於p-type矽基板上，並利用I-V特性量測以及電流-電壓特性量測得到不波長之光響應度曲線，得到在950 nm有最大的光響應且光響應度達到0.8 A/W高於一般傳統之PN接面Si光偵測元件，証明ITO透明導電膜對光偵測元件的光響應度的提高，本實驗結果也可以提供未來高性能光偵測器的發展參考。 As know that indium tin oxide (ITO) is a good conductive material, a high transmittance in the visible light range, good adhesion with Si substrate, structure hardness and chemical inert, these properties make ITO a candidate for optoelectronic devices application. This thesis focused on the demonstration of the fabrication of a metal-insulate-semiconductor (MIS) photo-detector using ITO as the transparent conductive layer and its characterization of photo-responsivity. Results of current-voltage (I-V) characteristic measurements by illuminating monochromatic light showed that photo-responsivity as high as 0.8 A/W was achieved at wavelength around 900 nm-1000 nm. It proved that ITO conductive layer can effectively promote the photo-responsivity of a MIS photo-detector and the results are helpful to the development of a high efficient photo-detector.

利用ITO導電層於MIS元件製作及其光響應性能研究 = The fabrication and responsivity study of MIS photo-detector by using ITO conductive Layer
陳, 昀駿

利用ITO導電層於MIS元件製作及其光響應性能研究 = The fabrication and responsivity study of MIS photo-detector by using ITO conductive Layer / 陳昀駿撰 - [高雄市] : 撰者, 2014[民103]. - 59面 ; 圖，表 ; 30公分.
參考書目：面47-49103年12月16日公開.
氧化銦錫ITO thin film

利用ITO導電層於MIS元件製作及其光響應性能研究 = The fabrication and responsivity study of MIS photo-detector by using ITO conductive Layer
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300 $a 參考書目：面47-49
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314 $a 指導教授：施明昌博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 氧化銦錫(ITO)薄膜材料好的導電性，在可見光藍光波長的範圍有高的穿透率，與矽基板有很好的黏著性、材料硬度佳且化學性質穩定，因此ITO薄膜材料很適合應用在光電元件上，本論文主要探討利用ITO薄膜於MIS光偵測元件之製程，實驗使用電子束蒸鍍機(electron beam evaporation ) 蒸鍍ITO/SiO2薄膜於p-type矽基板上，並利用I-V特性量測以及電流-電壓特性量測得到不波長之光響應度曲線，得到在950 nm有最大的光響應且光響應度達到0.8 A/W高於一般傳統之PN接面Si光偵測元件，証明ITO透明導電膜對光偵測元件的光響應度的提高，本實驗結果也可以提供未來高性能光偵測器的發展參考。 As know that indium tin oxide (ITO) is a good conductive material, a high transmittance in the visible light range, good adhesion with Si substrate, structure hardness and chemical inert, these properties make ITO a candidate for optoelectronic devices application. This thesis focused on the demonstration of the fabrication of a metal-insulate-semiconductor (MIS) photo-detector using ITO as the transparent conductive layer and its characterization of photo-responsivity. Results of current-voltage (I-V) characteristic measurements by illuminating monochromatic light showed that photo-responsivity as high as 0.8 A/W was achieved at wavelength around 900 nm-1000 nm. It proved that ITO conductive layer can effectively promote the photo-responsivity of a MIS photo-detector and the results are helpful to the development of a high efficient photo-detector.
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610 0 $a 氧化銦錫 $a MIS光偵測元件 $a 光響應度
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