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利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = Th...

國立高雄大學應用物理學系碩士班

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy

Record Type:	Language materials, printed : monographic
Paralel Title:	The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
Author:	李佳龍,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	64面圖,表 : 30公分;
Subject:	X光吸收近邊緣結構
Subject:	XANES
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/38681301232482341464
Notes:	104年10月31日公開
Notes:	參考書目：面51-56
Summary:	N-doped ZnO薄膜以原子沉積法成長。我們藉由X光吸收近邊緣結構(XANES)、延伸X光吸收精細結構(EXAFS)和X光光電子能譜(XPS)來探討不同的摻N比例如何影響ZnO的電子結構。量測結果顯示O 2p-Zn 3d的hybridization隨著N含量的上升而增強，然而O 2p-Zn 4sp的hybridization則不存在顯著變化。X光繞射(XRD)和光致激發螢光光譜(PL)則用來探討N-doped ZnO薄膜的原子結構及發光特性。N在ZnO中形成的缺陷，隨N含量的改變，對於N-doped ZnO薄膜在原子結構和電子結構上造成不同的影響。 The Nitrogen-doped ZnO (ZnO:N) thin films were prepared by remote plasma in situ atomic layer deposition (ALD) method. We investigate how nitrogen doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). It reveals that the O 2p-Zn 3d hybridization enhanced with the increasing of nitrogen doping percentage while the O 2p-Zn 4sp hybridization exhibits no significant variation. Photoluminescence (PL) and x-ray diffraction (XRD) measurements have also been used to discuss the atomic structure and photoluminescence properties of ZnO thin films. On the nitrogen related defects, the formation of the occupation of oxygen sites with nitrogen doping percentage is the main factor to affect the atomic and electronic structures of ZnO:N thin films.

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
李, 佳龍

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy / 李佳龍撰 - [高雄市] : 撰者, 2014[民103]. - 64面 ; 圖,表 ; 30公分.
104年10月31日公開參考書目：面51-56.
X光吸收近邊緣結構XANES

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
LDR:02779nam0a2200289 450 001 430246
005 20170214092837.0
009 430246
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214y2014 k y0chiy50 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 $d The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy $z eng $f 李佳龍撰
210 $a [高雄市] $c 撰者 $d 2014[民103]
215 0 $a 64面 $c 圖,表 $d 30公分
300 $a 104年10月31日公開
300 $a 參考書目：面51-56
314 $a 指導教授：邱昭文博士
328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a N-doped ZnO薄膜以原子沉積法成長。我們藉由X光吸收近邊緣結構(XANES)、延伸X光吸收精細結構(EXAFS)和X光光電子能譜(XPS)來探討不同的摻N比例如何影響ZnO的電子結構。量測結果顯示O 2p-Zn 3d的hybridization隨著N含量的上升而增強，然而O 2p-Zn 4sp的hybridization則不存在顯著變化。X光繞射(XRD)和光致激發螢光光譜(PL)則用來探討N-doped ZnO薄膜的原子結構及發光特性。N在ZnO中形成的缺陷，隨N含量的改變，對於N-doped ZnO薄膜在原子結構和電子結構上造成不同的影響。 The Nitrogen-doped ZnO (ZnO:N) thin films were prepared by remote plasma in situ atomic layer deposition (ALD) method. We investigate how nitrogen doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). It reveals that the O 2p-Zn 3d hybridization enhanced with the increasing of nitrogen doping percentage while the O 2p-Zn 4sp hybridization exhibits no significant variation. Photoluminescence (PL) and x-ray diffraction (XRD) measurements have also been used to discuss the atomic structure and photoluminescence properties of ZnO thin films. On the nitrogen related defects, the formation of the occupation of oxygen sites with nitrogen doping percentage is the main factor to affect the atomic and electronic structures of ZnO:N thin films.
510 1 $a The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy $z eng
610 0 $a X光吸收近邊緣結構 $a 延伸X光吸收精細結構 $a X光光電子能譜 $a X光繞射 $a 光致激發螢光光譜
610 1 $a XANES $a EXAFS $a XPS $a XRD $a PL
681 $a 008M/0019 $b 423203 4020 $v 2007年版
700 1 $a 李 $b 佳龍 $4 撰 $3 673461
712 0 2 $a 國立高雄大學 $b 應用物理學系碩士班 $3 353956
801 0 $a tw $b 國立高雄大學 $c 20151023 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/38681301232482341464