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利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = Th...

國立高雄大學應用物理學系碩士班

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
作者:	李佳龍,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2014[民103]
面頁冊數:	64面圖,表 : 30公分;
標題:	X光吸收近邊緣結構
標題:	XANES
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/38681301232482341464
附註:	104年10月31日公開
附註:	參考書目：面51-56
摘要註:	N-doped ZnO薄膜以原子沉積法成長。我們藉由X光吸收近邊緣結構(XANES)、延伸X光吸收精細結構(EXAFS)和X光光電子能譜(XPS)來探討不同的摻N比例如何影響ZnO的電子結構。量測結果顯示O 2p-Zn 3d的hybridization隨著N含量的上升而增強，然而O 2p-Zn 4sp的hybridization則不存在顯著變化。X光繞射(XRD)和光致激發螢光光譜(PL)則用來探討N-doped ZnO薄膜的原子結構及發光特性。N在ZnO中形成的缺陷，隨N含量的改變，對於N-doped ZnO薄膜在原子結構和電子結構上造成不同的影響。 The Nitrogen-doped ZnO (ZnO:N) thin films were prepared by remote plasma in situ atomic layer deposition (ALD) method. We investigate how nitrogen doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). It reveals that the O 2p-Zn 3d hybridization enhanced with the increasing of nitrogen doping percentage while the O 2p-Zn 4sp hybridization exhibits no significant variation. Photoluminescence (PL) and x-ray diffraction (XRD) measurements have also been used to discuss the atomic structure and photoluminescence properties of ZnO thin films. On the nitrogen related defects, the formation of the occupation of oxygen sites with nitrogen doping percentage is the main factor to affect the atomic and electronic structures of ZnO:N thin films.

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
李, 佳龍

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy / 李佳龍撰 - [高雄市] : 撰者, 2014[民103]. - 64面 ; 圖,表 ; 30公分.
104年10月31日公開參考書目：面51-56.
X光吸收近邊緣結構XANES

利用XAS與XPS研究不同摻氮濃度之氧化鋅薄膜的電子與原子結構 = The atomic and electronic structures of nitrogen-doped ZnO thin films studied by x-ray absorption and x-ray photoelectron spectroscopy
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330 $a N-doped ZnO薄膜以原子沉積法成長。我們藉由X光吸收近邊緣結構(XANES)、延伸X光吸收精細結構(EXAFS)和X光光電子能譜(XPS)來探討不同的摻N比例如何影響ZnO的電子結構。量測結果顯示O 2p-Zn 3d的hybridization隨著N含量的上升而增強，然而O 2p-Zn 4sp的hybridization則不存在顯著變化。X光繞射(XRD)和光致激發螢光光譜(PL)則用來探討N-doped ZnO薄膜的原子結構及發光特性。N在ZnO中形成的缺陷，隨N含量的改變，對於N-doped ZnO薄膜在原子結構和電子結構上造成不同的影響。 The Nitrogen-doped ZnO (ZnO:N) thin films were prepared by remote plasma in situ atomic layer deposition (ALD) method. We investigate how nitrogen doping percentage affects the electronic structure of ZnO thin films by x-ray absorption near-edge structure (XANES) and x-ray photoelectron spectroscopy (XPS). It reveals that the O 2p-Zn 3d hybridization enhanced with the increasing of nitrogen doping percentage while the O 2p-Zn 4sp hybridization exhibits no significant variation. Photoluminescence (PL) and x-ray diffraction (XRD) measurements have also been used to discuss the atomic structure and photoluminescence properties of ZnO thin films. On the nitrogen related defects, the formation of the occupation of oxygen sites with nitrogen doping percentage is the main factor to affect the atomic and electronic structures of ZnO:N thin films.
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