Language:
English
繁體中文
Help
圖資館首頁
Login
Back
Switch To:
Labeled
|
MARC Mode
|
ISBD
Reliability of high mobility SiGe ch...
~
Franco, Jacopo.
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
Record Type:
Electronic resources : Monograph/item
Title/Author:
Reliability of high mobility SiGe channel MOSFETs for future CMOS applicationsby Jacopo Franco, Ben Kaczer, Guido Groeseneken.
Author:
Franco, Jacopo.
other author:
Kaczer, Ben.
Published:
Dordrecht :Springer Netherlands :2014.
Description:
xix, 187 p. :ill., digital ;24 cm.
Contained By:
Springer eBooks
Subject:
Metal oxide semiconductor field-effect transistorsReliability.
Online resource:
http://dx.doi.org/10.1007/978-94-007-7663-0
ISBN:
9789400776630 (electronic bk.)
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
Franco, Jacopo.
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
[electronic resource] /by Jacopo Franco, Ben Kaczer, Guido Groeseneken. - Dordrecht :Springer Netherlands :2014. - xix, 187 p. :ill., digital ;24 cm. - Springer Series in Advanced Microelectronics,v.471437-0387 ;. - Springer series in advanced microelectronics ;3..
ISBN: 9789400776630 (electronic bk.)Subjects--Topical Terms:
676153
Metal oxide semiconductor field-effect transistors
--Reliability.
Dewey Class. No.: 621.3815284
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
LDR
:00897nmm a2200253 a 4500
001
432021
003
DE-He213
005
20140513152855.0
006
m d
007
cr nn 008maaau
008
141114s2014 ne s 0 eng d
020
$a
9789400776630 (electronic bk.)
020
$a
9789400776623 (paper)
035
$a
978-94-007-7663-0
040
$a
GP
$c
GP
041
0
$a
eng
082
0 4
$a
621.3815284
$2
23
090
$a
TK7871.95
$b
.F825 2014
100
1
$a
Franco, Jacopo.
$3
676150
245
1 0
$a
Reliability of high mobility SiGe channel MOSFETs for future CMOS applications
$h
[electronic resource] /
$c
by Jacopo Franco, Ben Kaczer, Guido Groeseneken.
260
$a
Dordrecht :
$b
Springer Netherlands :
$b
Imprint: Springer,
$c
2014.
300
$a
xix, 187 p. :
$b
ill., digital ;
$c
24 cm.
490
1
$a
Springer Series in Advanced Microelectronics,
$x
1437-0387 ;
$v
v.47
650
0
$a
Metal oxide semiconductor field-effect transistors
$x
Reliability.
$3
676153
650
0
$a
Metal oxide semiconductors, Complementary
$x
Reliability.
$3
676154
650
1 4
$a
Physics.
$3
179414
650
2 4
$a
Semiconductors.
$3
182134
650
2 4
$a
Circuits and Systems.
$3
274416
650
2 4
$a
Optical and Electronic Materials.
$3
274099
650
2 4
$a
Electronic Circuits and Devices.
$3
495609
700
1
$a
Kaczer, Ben.
$3
676151
700
1
$a
Groeseneken, Guido.
$3
676152
710
2
$a
SpringerLink (Online service)
$3
273601
773
0
$t
Springer eBooks
830
0
$a
Springer series in advanced microelectronics ;
$v
3.
$3
444554
856
4 0
$u
http://dx.doi.org/10.1007/978-94-007-7663-0
950
$a
Engineering (Springer-11647)
based on 0 review(s)
ALL
電子館藏
Items
1 records • Pages 1 •
1
Inventory Number
Location Name
Item Class
Material type
Call number
Usage Class
Loan Status
No. of reservations
Opac note
Attachments
000000095558
電子館藏
1圖書
電子書
EB TK787195 F825 2014
一般使用(Normal)
On shelf
0
1 records • Pages 1 •
1
Multimedia
Multimedia file
http://dx.doi.org/10.1007/978-94-007-7663-0
Reviews
Add a review
and share your thoughts with other readers
Export
pickup library
Processing
...
Change password
Login