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半導體量子點在電場下的電子弛豫現象 = Electron relaxat...

國立高雄大學應用物理學系碩士班

半導體量子點在電場下的電子弛豫現象 = Electron relaxation in semiconductor quantum dots under electric fields

Record Type:	Language materials, printed : monographic
Paralel Title:	Electron relaxation in semiconductor quantum dots under electric fields
Author:	張峻瑋,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2011[民100]
Description:	52面部份彩圖，表 : 30公分;
Subject:	電子弛豫
Subject:	electron relaxation
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/85603843630353451585
Notes:	參考書目：面41-42
Notes:	103年12月16日公開
Summary:	在本論文中，我們討論半導體量子點在電場下的電子弛豫現象，利用矩陣對角化方法來求解系統的能階及波函數，並以費米黃金法則計算從第一激發態到基態的弛豫率變化，甚至來自更高能階的弛豫率。在論文中，我們探討垂直方向耦合的多個量子點系統，結果顯示，電場會影響電子的能態，進而使電子弛豫率明顯地受到電場調控。另外，量子點系統中障礙的位能高度、寬度、系統總寬度、溫度和水平束縛位能以及結構對稱性，都會改變電子弛豫率的行為。 We study the semiconductor quantum dots electron relaxation under the external electric fields by using matrix diagonalization to calculate the energy level and the wave function in our system. By Fermi’s golden rule, we calculate the relaxation rate from the first excited state, also show the higher excited states to the ground state.In this thesis, we consider the vertically coupled quantum dots, and the results show that the relaxation is obviously dependent on the modulation of the electric fields because the influence of electric fields on the energy state is existent. Furthermore, the relaxation rate also depends on the structure of system, temperature, and horizontal confinement.

半導體量子點在電場下的電子弛豫現象 = Electron relaxation in semiconductor quantum dots under electric fields
張, 峻瑋

半導體量子點在電場下的電子弛豫現象 = Electron relaxation in semiconductor quantum dots under electric fields / 張峻瑋撰 - [高雄市] : 撰者, 2011[民100]. - 52面 ; 部份彩圖，表 ; 30公分.
參考書目：面41-42103年12月16日公開.
電子弛豫electron relaxation

半導體量子點在電場下的電子弛豫現象 = Electron relaxation in semiconductor quantum dots under electric fields
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330 $a 在本論文中，我們討論半導體量子點在電場下的電子弛豫現象，利用矩陣對角化方法來求解系統的能階及波函數，並以費米黃金法則計算從第一激發態到基態的弛豫率變化，甚至來自更高能階的弛豫率。在論文中，我們探討垂直方向耦合的多個量子點系統，結果顯示，電場會影響電子的能態，進而使電子弛豫率明顯地受到電場調控。另外，量子點系統中障礙的位能高度、寬度、系統總寬度、溫度和水平束縛位能以及結構對稱性，都會改變電子弛豫率的行為。 We study the semiconductor quantum dots electron relaxation under the external electric fields by using matrix diagonalization to calculate the energy level and the wave function in our system. By Fermi’s golden rule, we calculate the relaxation rate from the first excited state, also show the higher excited states to the ground state.In this thesis, we consider the vertically coupled quantum dots, and the results show that the relaxation is obviously dependent on the modulation of the electric fields because the influence of electric fields on the energy state is existent. Furthermore, the relaxation rate also depends on the structure of system, temperature, and horizontal confinement.
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