不同鹵化物成分之鈣鈦礦/富勒烯平面異質接面太陽能電池探討 = Perov...
國立高雄大學化學工程及材料工程學系碩士班

 

  • 不同鹵化物成分之鈣鈦礦/富勒烯平面異質接面太陽能電池探討 = Perovskite / Fullerene Planar-Heterojunction Solar Cells Based on Different Halide Compositions in Perovskite
  • 紀錄類型: 書目-語言資料,印刷品 : 單行本
    並列題名: Perovskite / Fullerene Planar-Heterojunction Solar Cells Based on Different Halide Compositions in Perovskite
    作者: 陳怡廷,
    其他團體作者: 國立高雄大學
    出版地: [高雄市]
    出版者: 撰者;
    出版年: 2014[民103]
    面頁冊數: 98面圖,表 : 30公分;
    標題: 鈣鈦礦太陽能電池
    標題: Provskite solar cells
    電子資源: http://handle.ncl.edu.tw/11296/ndltd/27111153977144263109
    附註: 參考書目:面95-98
    附註: 104年3月25日公開
    摘要註: 太陽能電池近年來發展趨勢為低污染性、低製造成本、元件製作簡易、高光電轉換效率,也因此有研究團隊開發出新型態鈣鈦礦結構(Perovskite)太陽能電池,這種結構電池符合上述特性,已引起大量學者投入此研究,使得此種結構的太陽能電池轉換效率預測可高達20%。近來因為新型態吸光物質的開發與進展,使得此類型的太陽能電池引起各界的關注。本論文研究以鈣鈦礦/富勒烯平面異質接面結構為目標,成功合成三種不同鹵化物結構之鈣鈦礦活性層給體材料,並以PCBM為活性層受體材料,搭配不同的膜厚層比例做組合,以製造出高效率之全固態、混層式、給體-受體型式的鈣鈦礦太陽能電池。我們利用簡單的液相法(solution process)製備三種鈣鈦礦相的無機結晶材料(三碘化物CH3NH3PbI3以及混合鹵化物CH3NH3PbI2 Br與CH3NH3PbI2Cl)與PCBM組成不同的活性層,並以ITO glass做為正電極,PEDOT:PSS做為電洞傳輸層,2,9-二甲基-4,7-二苯基-1,10-菲啰啉(BCP)做中洞阻隔層(hole-blocking layer HBL),Al為負電極,用平面型異質接合(planar heterojunction;PHJ)的方式組成給體-受體型式之鈣鈦礦太陽能電池。本論文研究分為三部份,第一部分為合成太陽能電池元件構造中的活性層(ative layer)給體材料:CH3NH3PbI3、CH3NH3PbI2Br與CH3NH3PbI2Cl等三種鈣鈦礦材料,經由X射線繞射分析儀(XRD)、X光能譜分析儀(EDS)與場發射電子顯微鏡(SEM)鑑定此三種光電材料合成成功;接著以紫外-可見光光譜(UV-Vis)、螢光光譜(PL)及循環伏安圖譜(CV),觀察材料之光電性質及能隙。第二部分使用上述合成的光電材料導入平面型異質接合太陽能電池元件,以市售之BCP做為電洞阻隔層,ITO/PEDOT:PSS/Perovskite:PCBM/HBL/Al結構組成元件。首先利用CH3NH3PbI3合成材料:PCBM分層塗佈為活性層,探討不同退火溫度及不同旋塗厚度對太陽能電池元件效率之影響。發現最佳退火溫度為100℃/30min/活性層給體材料旋塗層數4層(1500rpm)時,量測短路電流5.945mA/cm2,FF值41.9%時具有最佳光電轉換效率1.432%。第三部分使用上述合成的最佳參數條件進行CH3NH3PbI2Br/PCBM、CH3NH3PbI2Cl/PCBM之活性層塗佈,並比較此三種鈣鈦礦其太陽能電池元件效率之影響。合成之三種鈣鈦礦相給體材料CH3NH3PbI3、CH3NH3PbI2Br與CH3NH3PbI2Cl分別具有1.55eV、1.82eV和1.92eV的能隙,因CH3NH3PbI2Cl對於300~500nm具有較強吸收波峰,且Pb與取代的鹵化物陰電性差異為CH3NH3PbI2Cl >CH3NH3PbI2Br >CH3NH3PbI3,故量測出鈣鈦礦取代鹵化物之光電效能形成CH3NH3PbI2Cl >CH3NH3PbI2Br >CH3NH3PbI3的狀況。當CH3NH3PbI2Cl作為活性層給體材料組裝的太陽能電池,量測短路電流7.167 mA/cm2,FF值45.4%時具有最佳的光電轉換效率1.684%。 Current development trends in solar cell are low pollution and manufacturing cost, simple component and high photon conversion efficiency. Therefore the research team developed a new type of pervskite structure cell in accordance with the above mentioned characteristics. A lot of scholars participate in the relevant research leading to the prediction of solar cell conversion efficiency up to 20%. Lately, owing to the development and advance of the new type of absorbing material, this type of solar cell has brought about the considerable concern of the general public.In this study of Perovskite/Fullerene Planar-Heterojunction structure, three different halide perovskite structures were synthesized as the donor material of active layers. There material were then combined with the acceptor material of PCBM to produce high-efficiency solid-state、mixed-layer、donor-acceptor type perovskite solar cells. We use the solution process to prepare of inorganic perovskite crystalline materials (CH3NH3PbI3、CH3NH3PbI2Br 、CH3NH3PbI2Cl) the three types, then combined with PCBM to form different active layers. The solar cell devices consisted of ITO glass as the positive electrode; PEDOT: PSS as the hole transport layer; bathocuproine (BCP) as the hole-blocking layer (HBL); Al as the negative electrode, wsing the planar heterojunction (PHJ) ; approach to manufacture the donor - acceptor type of perovskite solar cells.This research was divided into three parts. The first part was to synthesize the donor material of active layers, the solar cell including threekinds of perovskite material, (CH3NH3PbI3、CH3NH3PbI2Br and CH3NH3PbI2Cl). Characterized with X-ray diffraction analyzer (XRD), X ray spectrum analyzer (EDS) and field emission electron microscopy (SEM) The three materials were confirmed to have been successfully synthesized. spectroscopy (UV-vis), fluorescence spectroscopy (PL) spectra and cyclic voltammetry (CV) were then carried out to investigate theis optoelectronic properties and energy gaps.The secondpart was to introduce the three synthesized material to fabricate the planar-heterojunction solar cells. By using BCP as the hole blocking layer, the solar cells had the structures of ITO/PEDOT:PSS/Perovskite: PCBM/HBL/Al. At first, using the CH3NH3PbI3/PCBM as thickness the active layer, the effect of annealing temperature and thickness the active layer on the photovoltaic performance was investigated, It was found that at the annealing temp, of 100℃/30min and the thickness of pervoskite was 4 layer, the solar cell device had the optimal efficiency of 1.432%, with a Jsc of 5.945mA/cm2, and FF of 41.9%.The third part was to use the optimal operating parameter to proceed the coating of CH3NH3PbI2Br /PCBM and CH3NH3PbI2Cl/PCBM active layers, and compared. the device performances of the three kinds of solar cells. It was found that the threekinds donor materials (CH3NH3PbI3、CH3NH3PbI2Br and CH3NH3PbI2Cl) has the energy gaps of 1.55eV, 1.82eV and 1.92eV respectively. Due to the difference of electronegativity between Pb and the substituted element was in the order of CH3NH3PbI2Cl >CH3NH3PbI2Br> CH3NH3PbI3. the photovoltaic perform was in the order of CH3NH3PbI2Cl >CH3NH3PbI2Br> CH3NH3PbI3. It was found that the device using the CH3NH3PbI2Cl as the donor material had the highect power conversion efficiacy of 1.684% with a Jsc of 7.167mA/cm2 and FF of 45.4%.
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310002513979 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 541208 7591 2014 一般使用(Normal) 在架 0
310002513987 博碩士論文區(二樓) 不外借資料 學位論文 TH 008M/0019 541208 7591 2014 c.2 一般使用(Normal) 在架 0
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