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自組裝3-(胺丙基)三甲氧基矽烷薄膜合成金奈米晶粒之機制與應用 = Me...

國立高雄大學化學工程及材料工程學系碩士班

自組裝3-(胺丙基)三甲氧基矽烷薄膜合成金奈米晶粒之機制與應用 = Mechanism and application of self-assembly 3-aminopropyl-trimethoxysilane thin film induced gold nanoparticles

Record Type:	Language materials, printed : monographic
Paralel Title:	Mechanism and application of self-assembly 3-aminopropyl-trimethoxysilane thin film induced gold nanoparticles
Author:	黃宏輝,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2015[民104]
Description:	105面圖，表 : 30公分;
Subject:	旋鍍法
Subject:	spin coating
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/96862912821037096389
Notes:	106年4月25日公開
Notes:	參考書目：面96-105
Summary:	本研究以旋鍍法搭配自組裝方式鍍製3-(胺丙基)三甲氧基矽烷(APTMS)薄膜於基板上，並將鍍有APTMS之基板浸入氯金酸及氫氧化鈉的混合溶液中，就可以在APTMS上生成尺寸小(~5nm)且具有高覆蓋密度(~1012cm-2)的金奈米粒子(GNPs)。不同於常見的檸檬酸還原法以及硼氫化鈉還原法，以APTMS自組裝層還原的方式，可以減少還原劑或保護劑的添加，而且反應在室溫下即可進行，同時降低了製程的複雜程度及減緩對環境的傷害。藉由改變氯金酸水溶液pH值、濃度、浸鍍時間與GNPs離心等各項測試，證實這些粒徑均勻的GNPs主要由APTMS分子所輔助生成。不過，以這種方式所還原的GNPs在元件製程時較無法抵抗後續元件製程中控制氧化層鍍製所形成的強酸環境，因此我們以浸鍍的方式再次組裝APTMS分子於GNPs上，形成三明治結構(Si/Oxide/APTMS/GNPs/APTMS)，可達到保護奈米粒子並提高GNPs穩定性的功效。同時，鍍有high-κ材料(HfO2)之Si/HfO2基板製備而成的奈米晶體記憶體電容結構比Si/SiO2基板製備而成之結構在經過APTMS保護後具有更佳的特性，使Si/HfO2/APTMS/GNPs/APTMS結構在電性量測中最高可以承受7V之閘極電壓，最大記憶視窗達到2.8V。 Herein, the multi-layered 3-aminopropyl-trimethoxysilane(APTMS) were spin coated on the substrate by a self-assembly monolayer(SAM) process. And the gold nanoparticles(GNPs) with small size(~5nm) and high coverage density(~1012cm-2) were fabricated by dipping substrates into the mixture of chloroauric acid(HAuCl4) and sodium hydroxide. This process is different from the citrate and the NaBH4 reduction method. The temperature control, reduction agent, and protection agent are needed in those two methods, but not in APTMS thin film induced gold nanoparticles. Thus, the process can be simpler and the influences on environment are reduced.In the test of pH values, concentrations, dipping times and speed of centrifugations of HAuCl4 solution, we speculated that the GNPs were produced by the assist of APTMS molecules. However, the GNPs on the substrate was easily removed during the chemical-solution deposition of HfO2 due to the strong acid solution. To overcome this problem, the APTMS was further dip coated to cover the GNPs, constructing the Si/Oxide/APTMS/GNPs/APTMS sandwich structure. After the APTMS was dip coated on the GNPs, the stability of GNPs is improved. In this work, the structure constructed on the Si/HfO2(high-κmaterial) substrate shows a better electric property than the structure constructed on Si/SiO2 substrate. And the structure of Si/HfO2/APTMS/GNPs/APTMS can stand 7V of gate sweeping voltage, showing 2.8V of memory window at most.

自組裝3-(胺丙基)三甲氧基矽烷薄膜合成金奈米晶粒之機制與應用 = Mechanism and application of self-assembly 3-aminopropyl-trimethoxysilane thin film induced gold nanoparticles
黃, 宏輝

自組裝3-(胺丙基)三甲氧基矽烷薄膜合成金奈米晶粒之機制與應用 = Mechanism and application of self-assembly 3-aminopropyl-trimethoxysilane thin film induced gold nanoparticles / 黃宏輝撰 - [高雄市] : 撰者, 2015[民104]. - 105面 ; 圖，表 ; 30公分.
106年4月25日公開參考書目：面96-105.
旋鍍法spin coating

自組裝3-(胺丙基)三甲氧基矽烷薄膜合成金奈米晶粒之機制與應用 = Mechanism and application of self-assembly 3-aminopropyl-trimethoxysilane thin film induced gold nanoparticles
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330 $a 本研究以旋鍍法搭配自組裝方式鍍製3-(胺丙基)三甲氧基矽烷(APTMS)薄膜於基板上，並將鍍有APTMS之基板浸入氯金酸及氫氧化鈉的混合溶液中，就可以在APTMS上生成尺寸小(~5nm)且具有高覆蓋密度(~1012cm-2)的金奈米粒子(GNPs)。不同於常見的檸檬酸還原法以及硼氫化鈉還原法，以APTMS自組裝層還原的方式，可以減少還原劑或保護劑的添加，而且反應在室溫下即可進行，同時降低了製程的複雜程度及減緩對環境的傷害。藉由改變氯金酸水溶液pH值、濃度、浸鍍時間與GNPs離心等各項測試，證實這些粒徑均勻的GNPs主要由APTMS分子所輔助生成。不過，以這種方式所還原的GNPs在元件製程時較無法抵抗後續元件製程中控制氧化層鍍製所形成的強酸環境，因此我們以浸鍍的方式再次組裝APTMS分子於GNPs上，形成三明治結構(Si/Oxide/APTMS/GNPs/APTMS)，可達到保護奈米粒子並提高GNPs穩定性的功效。同時，鍍有high-κ材料(HfO2)之Si/HfO2基板製備而成的奈米晶體記憶體電容結構比Si/SiO2基板製備而成之結構在經過APTMS保護後具有更佳的特性，使Si/HfO2/APTMS/GNPs/APTMS結構在電性量測中最高可以承受7V之閘極電壓，最大記憶視窗達到2.8V。 Herein, the multi-layered 3-aminopropyl-trimethoxysilane(APTMS) were spin coated on the substrate by a self-assembly monolayer(SAM) process. And the gold nanoparticles(GNPs) with small size(~5nm) and high coverage density(~1012cm-2) were fabricated by dipping substrates into the mixture of chloroauric acid(HAuCl4) and sodium hydroxide. This process is different from the citrate and the NaBH4 reduction method. The temperature control, reduction agent, and protection agent are needed in those two methods, but not in APTMS thin film induced gold nanoparticles. Thus, the process can be simpler and the influences on environment are reduced.In the test of pH values, concentrations, dipping times and speed of centrifugations of HAuCl4 solution, we speculated that the GNPs were produced by the assist of APTMS molecules. However, the GNPs on the substrate was easily removed during the chemical-solution deposition of HfO2 due to the strong acid solution. To overcome this problem, the APTMS was further dip coated to cover the GNPs, constructing the Si/Oxide/APTMS/GNPs/APTMS sandwich structure. After the APTMS was dip coated on the GNPs, the stability of GNPs is improved. In this work, the structure constructed on the Si/HfO2(high-κmaterial) substrate shows a better electric property than the structure constructed on Si/SiO2 substrate. And the structure of Si/HfO2/APTMS/GNPs/APTMS can stand 7V of gate sweeping voltage, showing 2.8V of memory window at most.
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