| 摘要註: |
本研究中,我們利用射頻磁控濺鍍在室溫環境下沉積單層IGZO薄膜及多層的IGZO/Ag/IGZO薄膜於玻璃基板上,藉由時間、工作壓力、銀層濺鍍時間及IGZO厚度的改變,期望能得到具有優良導電性質以及良好透光性質的透明導電膜,透過UV-vis可見光分析儀、霍爾量測儀、X光繞射分析儀以及掃描式電子顯微鏡進行薄膜的光學性質、導電性質、結晶性質以及微觀結構的探討。在單層IGZO薄膜實驗中得到最佳參數為可見光平均透光率82%,載子濃度、載子遷移率、電阻率分別為1.46x1020cm-3、15.5cm2/Vs以及3.36x10-3Ω-cm。多層IGZO/Ag/IGZO薄膜,在不同工作壓力下各組薄膜參數的電性均隨著銀層厚度的增加而上升,載子遷移率分別為53.9cm2/Vs、61.6cm2/Vs、36cm2/Vs,電阻率則為2.11x10-5Ω-cm、2.06x10-5Ωcm、2.42x10-5Ω-cm。在固定銀層厚度改變IGZO厚度的實驗結果發現透光率由原本的79.6%下降至72.7%,其中最佳的參數電性具有48.2cm2/Vs及3.03x10-Ω-cm的載子遷移率以及電阻率。我們亦利用電漿頻率的計算取得和可見光分析相符的結果。在XRD分析中,單層IGZO薄膜及多層的IGZO/Ag/IGZO薄膜均得到非晶質的結果。在RRAM元件的部分,單層IGZO薄膜及多層的IGZO/Ag/IGZO薄膜中,根據電壓以及膜厚的計算得到元件的驅動電場,我們得到結果顯示,當元件中的薄膜載子遷移率越高,驅動元件所需要的電場則越小,而在各組參數中也顯示當膜厚增加電阻越小,驅動電場亦跟著下降。 In this study, single layer IGZO thin films and multi-layers of IGZO/Ag/IGZO thin films were deposited onto glass substrates at room temperature by using radio frequency magnetron sputtering. We expect being able to produce transparent conducting films with better conducting properties and high transparency under different depositing time , working pressure, and thicknesses of IGZO and sliver thin films. The optical, electrical, crystalline, and micro-structure properties of single layer IGZO thin films and multi-layers of IGZO/Ag/IGZO thin films were studied with UV-vis spectrophotometry, Hall measurement, x-ray diffractometer and scanning electron microscope. The measured results of single layer IGZO showed that the average transmittance in visible region was 82%, carrier concentration was 1.46x1020 cm-3, mobility was 15.5cm2/Vs, and resistivity was 3.36x10-3Ω-cm. As in different deposition parameters were used, the electrical properties of multi-layers IGZO/Ag/IGZO thin films became better with the increasing thickness of Ag thin films. The carrier mobility was 53.9 cm2/Vs, 61.6cm2/Vs, 36cm2/Vs and resistivity was 2.11x10-5Ω-cm, 2.06x10-Ω-cm, 2.42x10-5Ω-cm, respectively. The results showed as the thickness of Ag was fixed, the transmittance decreased from 79.6% to 72.7% as the thickness of IGZO thin films increased. The best results of carrier concentration and mobility were 48.2cm2/Vs and 3.03x10-Ω-cm. In this study, we also confirmed the analysis of transmittance with calculation of plasma frequency. The results of X-ray diffraction patterns showed that the single layer IGZO thin films and multi-layers of IGZO/Ag/IGZO thin films both groups showed the amorphous phase. In the study of RRAM, when the single layer IGZO thin films and multi-layers of IGZO/Ag/IGZO thin films were used, the results showed the needed electric fields decreased as the mobility of thin films increased. We also found that as the thickness of thin films increased, the resistivity would decrease, and the drive electric fields decreased as well. |