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鋰摻雜氧化鎳薄膜沉積與應用於p-n接面元件製作 = Deposition...

國立高雄大學化學工程及材料工程學系碩士班

鋰摻雜氧化鎳薄膜沉積與應用於p-n接面元件製作 = Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices
作者:	陳茂安,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	國立高雄大學;
出版年:	2015[民104]
面頁冊數:	[16]，152葉圖，表 : 30公分;
標題:	氧化鎳
標題:	Nickel oxide
電子資源:	https://hdl.handle.net/11296/6v5qtc
附註:	109年11月18日公開
摘要註:	本研究利用射頻磁控濺鍍系統,以氧化鎳靶與氧化鎳摻雜鋰之複合靶,進行氧化鎳薄膜濺鍍沉積在玻璃(Eagle XG)與可撓式(PET)基板上,藉由改變濺鍍時氣氛比例(100、75、50、25% O2)、基板溫度(25、150、250、350℃)與摻雜不同鋰(2、4、6、12at%)成份進行比較,並利用Figure of Merit方程式找出其相較佳的條件製作NiO-ITO 導電膜之p-n異質接面二極體元件。使用儀器如:X光繞射儀、場發射掃描式電子顯微鏡、聚焦離子束、場發穿透式電子顯微鏡、X光光電子能譜儀、紫外光-可見光分光光度計、霍爾效應量測、四點探針量測與電流-電壓曲線。實驗結果分析顯示,利用Figure of Merit方程式得知氧化鎳薄膜沉積於玻璃基板中在75%氧氣氣氛、基板溫度250℃與6at%的鋰摻雜量中光、電性值有較佳值,在可見光區(400~700nm)穿透率為60.07%,電阻率為5.25Ω-cm。而氧化鎳薄膜沉積於可撓式基板中在50%氧氣氣氛、基板溫度100℃與6at%的鋰摻雜量中光性與電性有較佳值,在可見光區(400~700nm)穿透率為56.46%,電阻率為29.4Ω-cm。 In this study, nickel oxide thin films were deposited on Corning glass (Eagle XG) and flexible (PET) substrate by radio frequency magnetron sputtering system using nickel oxide target and lithium-doped nickel oxide (NiO:Li) composite targets. By changing the ratio of the ambience (100、75、50、25% O2), substrate temperature (25、150、250、350℃), and lithium concentration (2、4、6、12at%) as different parameters during deposition the properties of NiO thin films were compared. The NiO-ITO p-n heterojunction diodes were fabricated by using the NiO thin films with the better values of Figure of Merit and found their properties. The using instruments included X-ray diffractometer, Field-Emission Scanning Electron Microscope, Focused Ion Beam, Field-Emission Transmission Electron Microscope, X-ray Photoelectron Spectrometer, Ultraviolet-Visible Spectrometer, Hall effect measurement, Four-Point Probe measurement and I-V Curve. The experimental analysis results obtained from the equation of Figure of Merit showed that the NiO thin films deposited on glass substrates with the parameters of 75% oxygen atmosphere, substrate temperature 250℃, and 6 at% of lithium concentration had the better electrical and optical characteristics. NiO thin films had the properties of transmittance of 60.07% in the visible light region (400 ~ 700nm) and resistivity of 5.25Ω-cm; For NiO thin films deposited on flexible substrate with the parameters of 50% oxygen atmosphere, substrate temperature 100℃, and 6at% of lithium concentration had the better electrical and optical characteristics. NiO thin films had the properties of transmittance of 56.46% in the visible light region and resistivity of 29.4Ω-cm.

鋰摻雜氧化鎳薄膜沉積與應用於p-n接面元件製作 = Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices
陳, 茂安

鋰摻雜氧化鎳薄膜沉積與應用於p-n接面元件製作 = Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices / 陳茂安撰 - [高雄市] : 國立高雄大學, 2015[民104]. - [16]，152葉 ; 圖，表 ; 30公分.
109年11月18日公開.
參考書目：葉115-131.
氧化鎳Nickel oxide

鋰摻雜氧化鎳薄膜沉積與應用於p-n接面元件製作 = Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices
LDR:04038nam0a2200277 450 001 458232
005 20220310133815.0
010 0 $b 精裝
010 0 $b 平裝
100 $a 20151007d2015 k y0chiy50 e
101 0 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 鋰摻雜氧化鎳薄膜沉積與應用於p-n接面元件製作 $d Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices $z eng $f 陳茂安撰
210 $a [高雄市] $c 國立高雄大學 $d 2015[民104]
215 0 $a [16]，152葉 $c 圖，表 $d 30公分
300 $a 109年11月18日公開
314 $a 指導教授：楊證富博士
320 $a 參考書目：葉115-131
328 $a 碩士論文--國立高雄大學化學工程及材料工程學系碩士班
330 $a 本研究利用射頻磁控濺鍍系統,以氧化鎳靶與氧化鎳摻雜鋰之複合靶,進行氧化鎳薄膜濺鍍沉積在玻璃(Eagle XG)與可撓式(PET)基板上,藉由改變濺鍍時氣氛比例(100、75、50、25% O2)、基板溫度(25、150、250、350℃)與摻雜不同鋰(2、4、6、12at%)成份進行比較,並利用Figure of Merit方程式找出其相較佳的條件製作NiO-ITO 導電膜之p-n異質接面二極體元件。使用儀器如:X光繞射儀、場發射掃描式電子顯微鏡、聚焦離子束、場發穿透式電子顯微鏡、X光光電子能譜儀、紫外光-可見光分光光度計、霍爾效應量測、四點探針量測與電流-電壓曲線。實驗結果分析顯示,利用Figure of Merit方程式得知氧化鎳薄膜沉積於玻璃基板中在75%氧氣氣氛、基板溫度250℃與6at%的鋰摻雜量中光、電性值有較佳值,在可見光區(400~700nm)穿透率為60.07%,電阻率為5.25Ω-cm。而氧化鎳薄膜沉積於可撓式基板中在50%氧氣氣氛、基板溫度100℃與6at%的鋰摻雜量中光性與電性有較佳值,在可見光區(400~700nm)穿透率為56.46%,電阻率為29.4Ω-cm。 In this study, nickel oxide thin films were deposited on Corning glass (Eagle XG) and flexible (PET) substrate by radio frequency magnetron sputtering system using nickel oxide target and lithium-doped nickel oxide (NiO:Li) composite targets. By changing the ratio of the ambience (100、75、50、25% O2), substrate temperature (25、150、250、350℃), and lithium concentration (2、4、6、12at%) as different parameters during deposition the properties of NiO thin films were compared. The NiO-ITO p-n heterojunction diodes were fabricated by using the NiO thin films with the better values of Figure of Merit and found their properties. The using instruments included X-ray diffractometer, Field-Emission Scanning Electron Microscope, Focused Ion Beam, Field-Emission Transmission Electron Microscope, X-ray Photoelectron Spectrometer, Ultraviolet-Visible Spectrometer, Hall effect measurement, Four-Point Probe measurement and I-V Curve. The experimental analysis results obtained from the equation of Figure of Merit showed that the NiO thin films deposited on glass substrates with the parameters of 75% oxygen atmosphere, substrate temperature 250℃, and 6 at% of lithium concentration had the better electrical and optical characteristics. NiO thin films had the properties of transmittance of 60.07% in the visible light region (400 ~ 700nm) and resistivity of 5.25Ω-cm; For NiO thin films deposited on flexible substrate with the parameters of 50% oxygen atmosphere, substrate temperature 100℃, and 6at% of lithium concentration had the better electrical and optical characteristics. NiO thin films had the properties of transmittance of 56.46% in the visible light region and resistivity of 29.4Ω-cm.
510 1 $a Deposition of Li-Doped NiO Thin Films and the Applications in the Fabrication of p-n Junction Devices $z eng
610 # 0 $a 氧化鎳 $a 鋰摻雜 $a Figure of Merit
610 # 1 $a Nickel oxide $a Lithium-doped $a Figure of Merit
681 $a 008M/0019 $b 541208 7543.1 $v 2007年版
700 1 $a 陳 $b 茂安 $4 撰 $3 709489
712 0 2 $a 國立高雄大學 $b 化學工程及材料工程學系碩士班 $3 353898
801 0 $a tw $b NUK $c 20201109 $g CCR
856 7 # $u https://hdl.handle.net/11296/6v5qtc $z 電子資源 $2 http