| 摘要註: |
近幾年來,奈米晶體記憶體元件因為有好的尺寸微縮性、寫入/抹除速度快、低的操作電壓以及良好的電荷保持率,而受到矚目。雖然有這麼多的優點,但其鍍製的方法,以及奈米粒子尺寸大小、分佈狀況以及形狀的控制,仍然是奈米晶體記憶體必須克服的兩項挑戰。在本研究中,我們利用自組裝的方式得到高的奈米粒子覆蓋密度及奈米粒子均勻的分佈,以應用於奈米晶體記憶體。本論文,利用丙基胺三過氧甲基矽烷(APTMS)自組裝的方式,製備出金和白金奈米晶體記憶體之元件。此種自組裝方式可分為兩個步驟:首先,APTMS會在基板上形成完整的單層分子膜,藉由這層分子膜可以跟奈米粒子之間進行自組裝,接下來再次的進行APTMS自組裝時,就可在奈米粒子上覆蓋一層薄的氧化層而形成核殼結構。最後,我們針對奈米粒子的穩定性以及記憶體電性特性做探討。本研究所獲致結果如下:(1)APTMS的層數越多時,氨基量也隨之增加,帶正電的氨基量到達一數值後就不會再有所提升,而氨基數量越多,奈米粒子穩定性越好,並有較佳的覆蓋密度,(2) APTMS自組裝方式合成的核殼奈米粒子結構,電性量測證實可以抑制電荷的流失以提升元件的應用性,(3)以更薄穿隧氧化層(2L HfO2)下所建構的奈米晶體記憶體有好的特性,電荷儲存量比起較厚(3L HfO2)元件更多,且能在更低電壓下進行操作。比起金奈米粒子,白金粒子有更高的功函數、較小的奈米粒子粒徑,和較高的粒子穩定性,故元件可有更好電性表現。 In recent year, Nanocrystal (NCs) memory devices have attracted a great deal of research interest because of their scalability, fast Program/ erase speeds, low operating voltages, and long retention times. With all these advantages, two major challenges still remain for embedded metal NCs: the deposition methods; and size, distribution and shape control. In this study, we employed a self-assembly (SAM) technique to prepare metal NCs with high density and good separation for the application of NCs memory.In this work, we fabricated gold and platinum NCs memory by SAM of 3-aminopropyltrimethoxysilane (APTMS). Such SAM pocesses can be divided into two steps: The first-run APTMS formed a well-organized monolayer on the substrate which was responsible for the obtained uniform SAM of nanoparticles (NPs). Next, the second-run APTMS formed an APTMS bilayer around the NPs. Finally, We discussed the stability of NPs and the electrical property of NCs memory.In this work, some results were discussed: (1) the amount of Amino group increases by SAM more APTMS layers. We found out that the positive charged -NH3+ stops increasing when reached a saturate value, leading to better stability and coverage density of NPs. (2)The electrical measurement results indicated the devices can be improved to suppress the property of charge loss by using the APTMS self-assembly core-shell structure. (3) The memory have better characteristic by replacing the thicker tunnel oxide layer(3L HfO2) with the thinner tunnel oxide layer (2L HfO2), and can store more charge and work at a lower voltage.. Compared to gold nanoparticle, platinum nanoparticle, with higher work function, smaller particle size and better particle stability, has superior electrical characteristics. |