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氧化鎂薄膜電阻切換性質與機制研究 = The study of resi...

國立高雄大學應用物理學系碩士班

氧化鎂薄膜電阻切換性質與機制研究 = The study of resistive switching properties and mechanisms of magnesium oxide thin films

Record Type:	Language materials, printed : monographic
Paralel Title:	The study of resistive switching properties and mechanisms of magnesium oxide thin films
Author:	繆政佑,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	國立高雄大學;
Year of Publication:	2015[民104]
Description:	[10]，95葉圖，表 : 30公分;
Subject:	氧化鎂
Subject:	MgO
Online resource:	https://hdl.handle.net/11296/8w3r6e
Notes:	109年11月18日公開
Summary:	電阻式記憶體是目前學術研究上非常熱門的項目，氧化鎂薄膜是常被研究的對象。本篇論文藉由磁控濺鍍氧化鎂靶材來製成氧化鎂薄膜，在濺鍍的過程中我們試著通入不同的工作氣體(Ar,Ar+O2,Ar+N2)、製成溫度為室溫、製成後進行一小時通氮後退火(800℃)，並且觀察不同氣體沉積下，氧化鎂薄膜的物理特性，更重要的是觀察電阻式切換特性以及分析傳導機制。從所有實驗結果說明我們藉由磁控濺鍍氧化鎂靶材，在使用氮氣為工作氣體下所製成的樣品薄膜，電阻切換特性為最佳;反而使用氧氣為工作氣體的樣品薄膜較差。並發現氧化鎂薄膜元件結構(metal-insulator-semiconductor, MIS)，具有雙極切換性質，證明在高阻態(high resistance state, HRS)為空間限制電荷傳導機制，低阻態(low resistance state, LRS)為歐姆定律，並推論電阻切換是由氧空缺形成的導體絲狀通路所主導。 Recently, resistance random access memory (RRAM) have attracted much attention, magnesium oxide (MgO) thin films is one of the most important research. In this work, the MgO films were deposited on silicon substrates by using magnetron sputtering on a MgO target at room temperature. In the process, we used different work atmosphere (Ar,Ar+O2,Ar+N2). A thermal annealing was performed at 800℃ for 1 hour in nitrogen ambient. After experiment, we analyzed the physical characteristic, resistive switching properties and the conduction mechanisms. According to experimental results indicate that the resistive switching properties of MgO films deposited by adding nitrogen ambient is better than oxygen ambient. Besides, the MgO film structure (metal-insulator-semiconductor-MIS) displays bipolar resistance switching properties and also indicate that the conduction mechanisms in MgO films is dominated by the space-charge limited conduction and Ohmic conduction in high resistance state (HRS) and low resistance state (LRS), respectively. At least, we proposed here that the resistance change is due to the migration of oxygen vacancy (VOs).

氧化鎂薄膜電阻切換性質與機制研究 = The study of resistive switching properties and mechanisms of magnesium oxide thin films
繆, 政佑

氧化鎂薄膜電阻切換性質與機制研究 = The study of resistive switching properties and mechanisms of magnesium oxide thin films / 繆政佑撰 - [高雄市] : 國立高雄大學, 2015[民104]. - [10]，95葉 ; 圖，表 ; 30公分.
109年11月18日公開.
參考書目：葉82-84.
氧化鎂MgO

氧化鎂薄膜電阻切換性質與機制研究 = The study of resistive switching properties and mechanisms of magnesium oxide thin films
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330 $a 電阻式記憶體是目前學術研究上非常熱門的項目，氧化鎂薄膜是常被研究的對象。本篇論文藉由磁控濺鍍氧化鎂靶材來製成氧化鎂薄膜，在濺鍍的過程中我們試著通入不同的工作氣體(Ar,Ar+O2,Ar+N2)、製成溫度為室溫、製成後進行一小時通氮後退火(800℃)，並且觀察不同氣體沉積下，氧化鎂薄膜的物理特性，更重要的是觀察電阻式切換特性以及分析傳導機制。從所有實驗結果說明我們藉由磁控濺鍍氧化鎂靶材，在使用氮氣為工作氣體下所製成的樣品薄膜，電阻切換特性為最佳;反而使用氧氣為工作氣體的樣品薄膜較差。並發現氧化鎂薄膜元件結構(metal-insulator-semiconductor, MIS)，具有雙極切換性質，證明在高阻態(high resistance state, HRS)為空間限制電荷傳導機制，低阻態(low resistance state, LRS)為歐姆定律，並推論電阻切換是由氧空缺形成的導體絲狀通路所主導。 Recently, resistance random access memory (RRAM) have attracted much attention, magnesium oxide (MgO) thin films is one of the most important research. In this work, the MgO films were deposited on silicon substrates by using magnetron sputtering on a MgO target at room temperature. In the process, we used different work atmosphere (Ar,Ar+O2,Ar+N2). A thermal annealing was performed at 800℃ for 1 hour in nitrogen ambient. After experiment, we analyzed the physical characteristic, resistive switching properties and the conduction mechanisms. According to experimental results indicate that the resistive switching properties of MgO films deposited by adding nitrogen ambient is better than oxygen ambient. Besides, the MgO film structure (metal-insulator-semiconductor-MIS) displays bipolar resistance switching properties and also indicate that the conduction mechanisms in MgO films is dominated by the space-charge limited conduction and Ohmic conduction in high resistance state (HRS) and low resistance state (LRS), respectively. At least, we proposed here that the resistance change is due to the migration of oxygen vacancy (VOs).
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