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Physics of semiconductor devices

Rudan, Massimo.

Physics of semiconductor devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	Physics of semiconductor devicesby Massimo Rudan.
Author:	Rudan, Massimo.
Published:	New York, NY :Springer New York :2015.
Description:	xxiii, 649 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Semiconductors.
Online resource:	http://dx.doi.org/10.1007/978-1-4939-1151-6
ISBN:	9781493911516 (electronic bk.)

Physics of semiconductor devices
Rudan, Massimo.

Physics of semiconductor devices[electronic resource] /by Massimo Rudan. - New York, NY :Springer New York :2015. - xxiii, 649 p. :ill., digital ;24 cm.

Part I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics.

This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.

ISBN: 9781493911516 (electronic bk.)

Standard No.: 10.1007/978-1-4939-1151-6doiSubjects--Topical Terms:

182134
Semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 537.622

Physics of semiconductor devices
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100 1 $a Rudan, Massimo. $3 712936
245 1 0 $a Physics of semiconductor devices $h [electronic resource] / $c by Massimo Rudan.
260 $a New York, NY : $b Springer New York : $b Imprint: Springer, $c 2015.
300 $a xxiii, 649 p. : $b ill., digital ; $c 24 cm.
505 0 $a Part I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics.
520 $a This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
650 0 $a Semiconductors. $3 182134
650 0 $a Quantum theory. $3 199020
650 1 4 $a Engineering. $3 210888
650 2 4 $a Circuits and Systems. $3 274416
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-1-4939-1151-6
950 $a Engineering (Springer-11647)