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On-chip electro-static discharge (ES...
~
Cui, Qiang.
On-chip electro-static discharge (ESD) protection for radio-frequency integrated circuits
Record Type:
Electronic resources : Monograph/item
Title/Author:
On-chip electro-static discharge (ESD) protection for radio-frequency integrated circuitsby Qiang Cui ... [et al.].
other author:
Cui, Qiang.
Published:
Cham :Springer International Publishing :2015.
Description:
xvii, 86 p. :ill., digital ;24 cm.
Contained By:
Springer eBooks
Subject:
Radio frequency integrated circuits.
Online resource:
http://dx.doi.org/10.1007/978-3-319-10819-3
ISBN:
9783319108193 (electronic bk.)
On-chip electro-static discharge (ESD) protection for radio-frequency integrated circuits
On-chip electro-static discharge (ESD) protection for radio-frequency integrated circuits
[electronic resource] /by Qiang Cui ... [et al.]. - Cham :Springer International Publishing :2015. - xvii, 86 p. :ill., digital ;24 cm.
Basics in ESD Protection of Radio Frequency Integrated Circuits -- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process -- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process -- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process -- Conclusion.
This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS) The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety level, while maximizing RF performance. Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies; Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS); Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance.
ISBN: 9783319108193 (electronic bk.)
Standard No.: 10.1007/978-3-319-10819-3doiSubjects--Topical Terms:
224750
Radio frequency integrated circuits.
LC Class. No.: TK7874.78
Dewey Class. No.: 621.38412
On-chip electro-static discharge (ESD) protection for radio-frequency integrated circuits
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Basics in ESD Protection of Radio Frequency Integrated Circuits -- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process -- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process -- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process -- Conclusion.
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This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS) The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs' ESD safety level, while maximizing RF performance. Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies; Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS); Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance.
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EB TK7874.78 O58 2015
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1 records • Pages 1 •
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http://dx.doi.org/10.1007/978-3-319-10819-3
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