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Charge-trapping non-volatile memorie...

Dimitrakis, Panagiotis.

Charge-trapping non-volatile memories.Volume 1,Basic and advanced devices

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Charge-trapping non-volatile memories.edited by Panagiotis Dimitrakis.
其他題名:	Basic and advanced devices
其他作者:	Dimitrakis, Panagiotis.
出版者:	Cham :Springer International Publishing :2015.
面頁冊數:	ix, 211 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Nonvolatile random-access memory.
電子資源:	http://dx.doi.org/10.1007/978-3-319-15290-5
ISBN:	9783319152905$q(electronic bk.)

Charge-trapping non-volatile memories.Volume 1,Basic and advanced devices
Charge-trapping non-volatile memories.Volume 1,Basic and advanced devices[electronic resource] /Basic and advanced devicesedited by Panagiotis Dimitrakis. - Cham :Springer International Publishing :2015. - ix, 211 p. :ill., digital ;24 cm.

Preface -- Introduction to NVM devices -- A synopsis on the state of the art of NAND memories -- Charge-trap memories with ion beam modified ONO stacks -- 3D NAND Flash Architectures -- Quantum dot Nonvolatile Memories -- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.

This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

ISBN: 9783319152905$q(electronic bk.)

Standard No.: 10.1007/978-3-319-15290-5doiSubjects--Topical Terms:

680408
Nonvolatile random-access memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 620.5

Charge-trapping non-volatile memories.Volume 1,Basic and advanced devices
LDR:01740nmm a2200337 a 4500 001 474932
003 DE-He213
005 20160318112147.0
006 m d
007 cr nn 008maaau
008 160420s2015 gw s 0 eng d
020 $a 9783319152905$q(electronic bk.)
020 $a 9783319152899$q(paper)
024 7 $a 10.1007/978-3-319-15290-5 $2 doi
035 $a 978-3-319-15290-5
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7895.M4
072 7 $a TBN $2 bicssc
072 7 $a TEC027000 $2 bisacsh
072 7 $a SCI050000 $2 bisacsh
082 0 4 $a 620.5 $2 23
090 $a TK7895.M4 $b C472 2015
245 0 0 $a Charge-trapping non-volatile memories. $n Volume 1, $p Basic and advanced devices $h [electronic resource] / $c edited by Panagiotis Dimitrakis.
246 3 0 $a Basic and advanced devices
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2015.
300 $a ix, 211 p. : $b ill., digital ; $c 24 cm.
505 0 $a Preface -- Introduction to NVM devices -- A synopsis on the state of the art of NAND memories -- Charge-trap memories with ion beam modified ONO stacks -- 3D NAND Flash Architectures -- Quantum dot Nonvolatile Memories -- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.
520 $a This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
650 0 $a Nonvolatile random-access memory. $3 680408
650 1 4 $a Materials Science. $3 273697
650 2 4 $a Nanotechnology. $3 193873
650 2 4 $a Electronic Circuits and Devices. $3 495609
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
650 2 4 $a Memory Structures. $3 274440
700 1 $a Dimitrakis, Panagiotis. $3 729001
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-15290-5
950 $a Chemistry and Materials Science (Springer-11644)