國立高雄大學圖資館 |

Language: English

Back

The source/drain engineering of nano...

Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	The source/drain engineering of nanoscale Germanium-based MOS devicesby Zhiqiang Li.
Author:	Li, Zhiqiang.
Published:	Berlin, Heidelberg :Springer Berlin Heidelberg :2016.
Description:	xiv, 59 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Metal oxide semiconductor field-effect transistors.
Online resource:	http://dx.doi.org/10.1007/978-3-662-49683-1
ISBN:	9783662496831$q(electronic bk.)

The source/drain engineering of nanoscale Germanium-based MOS devices
Li, Zhiqiang.

The source/drain engineering of nanoscale Germanium-based MOS devices[electronic resource] /by Zhiqiang Li. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xiv, 59 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.

ISBN: 9783662496831$q(electronic bk.)

Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:

221791
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.38152

The source/drain engineering of nanoscale Germanium-based MOS devices
LDR:01149nmm a2200313 a 4500 001 484211
003 DE-He213
005 20160923094056.0
006 m d
007 cr nn 008maaau
008 161012s2016 gw s 0 eng d
020 $a 9783662496831$q(electronic bk.)
020 $a 9783662496817$q(paper)
024 7 $a 10.1007/978-3-662-49683-1 $2 doi
035 $a 978-3-662-49683-1
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TJFD5 $2 bicssc
072 7 $a TEC008090 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7871.95 $b .L693 2016
100 1 $a Li, Zhiqiang. $3 509813
245 1 4 $a The source/drain engineering of nanoscale Germanium-based MOS devices $h [electronic resource] / $c by Zhiqiang Li.
260 $a Berlin, Heidelberg : $b Springer Berlin Heidelberg : $b Imprint: Springer, $c 2016.
300 $a xiv, 59 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 221791
650 0 $a Metal oxide semiconductors, Complementary. $3 184467
650 0 $a Germanium $x Electric properties. $3 742366
650 1 4 $a Physics. $3 179414
650 2 4 $a Semiconductors. $3 182134
650 2 4 $a Electronic Circuits and Devices. $3 495609
650 2 4 $a Nanoscale Science and Technology. $3 489389
650 2 4 $a Solid State Physics. $3 376486
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Springer theses. $3 557607
856 4 0 $u http://dx.doi.org/10.1007/978-3-662-49683-1
950 $a Physics and Astronomy (Springer-11651)