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The source/drain engineering of nano...
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Li, Zhiqiang.
The source/drain engineering of nanoscale Germanium-based MOS devices
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
The source/drain engineering of nanoscale Germanium-based MOS devicesby Zhiqiang Li.
作者:
Li, Zhiqiang.
出版者:
Berlin, Heidelberg :Springer Berlin Heidelberg :2016.
面頁冊數:
xiv, 59 p. :ill., digital ;24 cm.
Contained By:
Springer eBooks
標題:
Metal oxide semiconductor field-effect transistors.
電子資源:
http://dx.doi.org/10.1007/978-3-662-49683-1
ISBN:
9783662496831$q(electronic bk.)
The source/drain engineering of nanoscale Germanium-based MOS devices
Li, Zhiqiang.
The source/drain engineering of nanoscale Germanium-based MOS devices
[electronic resource] /by Zhiqiang Li. - Berlin, Heidelberg :Springer Berlin Heidelberg :2016. - xiv, 59 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..
Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions.
ISBN: 9783662496831$q(electronic bk.)
Standard No.: 10.1007/978-3-662-49683-1doiSubjects--Topical Terms:
221791
Metal oxide semiconductor field-effect transistors.
LC Class. No.: TK7871.95
Dewey Class. No.: 621.38152
The source/drain engineering of nanoscale Germanium-based MOS devices
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