國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Technology computer aided designsimu...

Sarkar, Chandan Kumar.

Technology computer aided designsimulation for VLSI MOSFET /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Technology computer aided designedited by Chandan Kumar Sarkar.
其他題名:	simulation for VLSI MOSFET /
其他作者:	Sarkar, Chandan Kumar.
出版者:	Boca Raton :CRC Press,c2013.
面頁冊數:	1 online resource (xv, 409 p., [15] p. of plates) :ill. (some col.)
標題:	Integrated circuitsCongresses.Very large scale integration
電子資源:	http://www.crcnetbase.com/isbn/9781466512665
ISBN:	9781466512665 (electronic bk.)

Technology computer aided designsimulation for VLSI MOSFET /
Technology computer aided designsimulation for VLSI MOSFET /[electronic resource] :edited by Chandan Kumar Sarkar. - Boca Raton :CRC Press,c2013. - 1 online resource (xv, 409 p., [15] p. of plates) :ill. (some col.)

Includes bibliographical references and index.

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--

ISBN: 9781466512665 (electronic bk.)Subjects--Topical Terms:

436461
Integrated circuits
--Very large scale integration--Congresses.

LC Class. No.: TK7874.75 / .T43 2013eb

Dewey Class. No.: 621.39/50285

Technology computer aided designsimulation for VLSI MOSFET /
LDR:01517cmm a2200241Ka 4500 001 486043
003 OCoLC
005 20131101095800.0
006 m o d
007 cr |n|---|||||
008 161104s2013 flua ob 001 0 eng d
020 $a 9781466512665 (electronic bk.)
020 $z 9781466512658 (hardback)
035 $a ocn841809949
040 $a N $c N $d CUS $d YDXCP $d TXA $d E7B $d IDEBK $d CDX $d WAU $d UMI
050 4 $a TK7874.75 $b .T43 2013eb
082 0 4 $a 621.39/50285 $2 23
245 0 0 $a Technology computer aided design $h [electronic resource] : $b simulation for VLSI MOSFET / $c edited by Chandan Kumar Sarkar.
260 $a Boca Raton : $b CRC Press, $c c2013.
300 $a 1 online resource (xv, 409 p., [15] p. of plates) : $b ill. (some col.)
504 $a Includes bibliographical references and index.
520 $a "MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- $c Provided by publisher.
588 $a Description based on print version record.
650 0 $a Integrated circuits $x Very large scale integration $x Computer-aided design $v Congresses. $3 436461
650 0 $a Metal oxide semiconductor field-effect transistors $x Computer-aided design $3 743612
700 1 $a Sarkar, Chandan Kumar. $3 727738
856 4 0 $u http://www.crcnetbase.com/isbn/9781466512665