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New perspectives on surface passivat...

Black, Lachlan E.

New perspectives on surface passivationunderstanding the Si-Al2O3 interface /

Record Type:	Electronic resources : Monograph/item
Title/Author:	New perspectives on surface passivationby Lachlan E. Black.
Reminder of title:	understanding the Si-Al2O3 interface /
Author:	Black, Lachlan E.
Published:	Cham :Springer International Publishing :2016.
Description:	xxviii, 204 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Interfaces (Physical sciences)
Online resource:	http://dx.doi.org/10.1007/978-3-319-32521-7
ISBN:	9783319325217$q(electronic bk.)

New perspectives on surface passivationunderstanding the Si-Al2O3 interface /
Black, Lachlan E.

New perspectives on surface passivationunderstanding the Si-Al2O3 interface /[electronic resource] :by Lachlan E. Black. - Cham :Springer International Publishing :2016. - xxviii, 204 p. :ill. (some col.), digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Surface Recombination Theory -- Al2O3 Deposition and Characterisation -- Electrical Properties of the Si..Al2O3 Interface -- Influence of Deposition Parameters -- Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration -- Effect of Surface Orientation and Morphology -- Relationship Between Al2O3 Bulk and Interface Properties -- Conclusion.

The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.

ISBN: 9783319325217$q(electronic bk.)

Standard No.: 10.1007/978-3-319-32521-7doiSubjects--Topical Terms:

190461
Interfaces (Physical sciences)

LC Class. No.: QC173.4.I57

Dewey Class. No.: 541.33

New perspectives on surface passivationunderstanding the Si-Al2O3 interface /
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245 1 0 $a New perspectives on surface passivation $h [electronic resource] : $b understanding the Si-Al2O3 interface / $c by Lachlan E. Black.
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505 0 $a Introduction -- Surface Recombination Theory -- Al2O3 Deposition and Characterisation -- Electrical Properties of the Si..Al2O3 Interface -- Influence of Deposition Parameters -- Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration -- Effect of Surface Orientation and Morphology -- Relationship Between Al2O3 Bulk and Interface Properties -- Conclusion.
520 $a The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.
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