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Electromigration inside logic cellsm...

Posser, Gracieli.

Electromigration inside logic cellsmodeling, analyzing and mitigating signal electromigration in NanoCMOS /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electromigration inside logic cellsby Gracieli Posser, Sachin S. Sapatnekar, Ricardo Reis.
Reminder of title:	modeling, analyzing and mitigating signal electromigration in NanoCMOS /
Author:	Posser, Gracieli.
other author:	Sapatnekar, Sachin S.
Published:	Cham :Springer International Publishing :2017.
Description:	xx, 118 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Logic circuits.
Online resource:	http://dx.doi.org/10.1007/978-3-319-48899-8
ISBN:	9783319488998$q(electronic bk.)

Electromigration inside logic cellsmodeling, analyzing and mitigating signal electromigration in NanoCMOS /
Posser, Gracieli.

Electromigration inside logic cellsmodeling, analyzing and mitigating signal electromigration in NanoCMOS /[electronic resource] :by Gracieli Posser, Sachin S. Sapatnekar, Ricardo Reis. - Cham :Springer International Publishing :2017. - xx, 118 p. :ill., digital ;24 cm.

Chapter 1. Introduction -- Chapter 2. State of the Art -- Chapter 3. Modeling Cell-internal EM -- Chapter 4. Current Calculation -- Chapter 5. Experimental Setup -- Chapter 6.Results -- Chapter 7. Analyzing the Electromigration Effects on Different Metal Layers -- Chapter 8. Conclusions.

This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.

ISBN: 9783319488998$q(electronic bk.)

Standard No.: 10.1007/978-3-319-48899-8doiSubjects--Topical Terms:

182233
Logic circuits.

LC Class. No.: TK7868.L6

Dewey Class. No.: 621.395

Electromigration inside logic cellsmodeling, analyzing and mitigating signal electromigration in NanoCMOS /
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245 1 0 $a Electromigration inside logic cells $h [electronic resource] : $b modeling, analyzing and mitigating signal electromigration in NanoCMOS / $c by Gracieli Posser, Sachin S. Sapatnekar, Ricardo Reis.
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505 0 $a Chapter 1. Introduction -- Chapter 2. State of the Art -- Chapter 3. Modeling Cell-internal EM -- Chapter 4. Current Calculation -- Chapter 5. Experimental Setup -- Chapter 6.Results -- Chapter 7. Analyzing the Electromigration Effects on Different Metal Layers -- Chapter 8. Conclusions.
520 $a This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.
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