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Charge-trapping non-volatile memorie...
~
Dimitrakis, Panagiotis.
Charge-trapping non-volatile memories.Volume 2,Emerging materials and structures
Record Type:
Electronic resources : Monograph/item
Title/Author:
Charge-trapping non-volatile memories.edited by Panagiotis Dimitrakis.
remainder title:
Emerging materials and structures
other author:
Dimitrakis, Panagiotis.
Published:
Cham :Springer International Publishing :2017.
Description:
v, 211 p. :ill., digital ;24 cm.
Contained By:
Springer eBooks
Subject:
Computer storage devices.
Online resource:
http://dx.doi.org/10.1007/978-3-319-48705-2
ISBN:
9783319487052$q(electronic bk.)
Charge-trapping non-volatile memories.Volume 2,Emerging materials and structures
Charge-trapping non-volatile memories.
Volume 2,Emerging materials and structures[electronic resource] /Emerging materials and structuresedited by Panagiotis Dimitrakis. - Cham :Springer International Publishing :2017. - v, 211 p. :ill., digital ;24 cm.
Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
ISBN: 9783319487052$q(electronic bk.)
Standard No.: 10.1007/978-3-319-48705-2doiSubjects--Topical Terms:
202780
Computer storage devices.
LC Class. No.: TK7895.M4
Dewey Class. No.: 621.39732
Charge-trapping non-volatile memories.Volume 2,Emerging materials and structures
LDR
:02065nmm a2200337 a 4500
001
507180
003
DE-He213
005
20170215152006.0
006
m d
007
cr nn 008maaau
008
171030s2017 gw s 0 eng d
020
$a
9783319487052$q(electronic bk.)
020
$a
9783319487038$q(paper)
024
7
$a
10.1007/978-3-319-48705-2
$2
doi
035
$a
978-3-319-48705-2
040
$a
GP
$c
GP
041
0
$a
eng
050
4
$a
TK7895.M4
072
7
$a
TBN
$2
bicssc
072
7
$a
TEC027000
$2
bisacsh
072
7
$a
SCI050000
$2
bisacsh
082
0 4
$a
621.39732
$2
23
090
$a
TK7895.M4
$b
C472 2017
245
0 0
$a
Charge-trapping non-volatile memories.
$n
Volume 2,
$p
Emerging materials and structures
$h
[electronic resource] /
$c
edited by Panagiotis Dimitrakis.
246
3 0
$a
Emerging materials and structures
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2017.
300
$a
v, 211 p. :
$b
ill., digital ;
$c
24 cm.
505
0
$a
Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
520
$a
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
650
0
$a
Computer storage devices.
$3
202780
650
0
$a
Cache memory.
$3
346243
650
1 4
$a
Materials Science.
$3
273697
650
2 4
$a
Nanotechnology.
$3
193873
650
2 4
$a
Electronic Circuits and Devices.
$3
495609
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
274412
650
2 4
$a
Memory Structures.
$3
274440
650
2 4
$a
Materials Engineering.
$3
682881
700
1
$a
Dimitrakis, Panagiotis.
$3
729001
710
2
$a
SpringerLink (Online service)
$3
273601
773
0
$t
Springer eBooks
856
4 0
$u
http://dx.doi.org/10.1007/978-3-319-48705-2
950
$a
Chemistry and Materials Science (Springer-11644)
based on 0 review(s)
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EB TK7895.M4 C472 2017
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http://dx.doi.org/10.1007/978-3-319-48705-2
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