國立高雄大學圖資館 |

Language: English

Back

III-nitride based light emitting dio...

Seong, Tae-Yeon.

III-nitride based light emitting diodes and applications

Record Type:	Electronic resources : Monograph/item
Title/Author:	III-nitride based light emitting diodes and applicationsedited by Tae-Yeon Seong ... [et al.].
other author:	Seong, Tae-Yeon.
Published:	Singapore :Springer Singapore :2017.
Description:	ix, 495 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Light emitting diodes.
Online resource:	http://dx.doi.org/10.1007/978-981-10-3755-9
ISBN:	9789811037559$q(electronic bk.)

III-nitride based light emitting diodes and applications
III-nitride based light emitting diodes and applications[electronic resource] /edited by Tae-Yeon Seong ... [et al.]. - 2nd ed. - Singapore :Springer Singapore :2017. - ix, 495 p. :ill. (some col.), digital ;24 cm. - Topics in applied physics,v.1330303-4216 ;. - Topics in applied physics ;v.123..

Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides -- Ultra-Efficient Solid-State Lighting -- LEDs Based on Heteroepitaxial GaN on Si Substrates -- Epitaxial Growth of GaN on Patterned Sapphire Substrates -- Growth and optical properties of GaN-based non- and semipolar LEDs -- Internal Quantum Efficiency in Light Emitting Diodes -- Internal Quantum Efficiency; Jong-In Shim -- III-Nitride Tunnel Junctions and their Applications -- Green, Yellow and Red LEDs -- AlGaN based deep-ultraviolet light-emitting diodes -- Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs -- Light Extraction of High Efficient Light-Emitting Diodes -- Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs -- Phosphors and white LED packaging -- High voltage LEDs -- Emerging System Level Applications for LED Technology.

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.

ISBN: 9789811037559$q(electronic bk.)

Standard No.: 10.1007/978-981-10-3755-9doiSubjects--Topical Terms:

219601
Light emitting diodes.

LC Class. No.: TK7871.15.N57

Dewey Class. No.: 621.381522

III-nitride based light emitting diodes and applications
LDR:03770nmm a2200337 a 4500 001 515467
003 DE-He213
005 20170518105439.0
006 m d
007 cr nn 008maaau
008 180126s2017 si s 0 eng d
020 $a 9789811037559$q(electronic bk.)
020 $a 9789811037542$q(paper)
024 7 $a 10.1007/978-981-10-3755-9 $2 doi
035 $a 978-981-10-3755-9
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.15.N57
072 7 $a PHV $2 bicssc
072 7 $a SCI003000 $2 bisacsh
082 0 4 $a 621.381522 $2 23
090 $a TK7871.15.N57 $b I25 2017
245 0 0 $a III-nitride based light emitting diodes and applications $h [electronic resource] / $c edited by Tae-Yeon Seong ... [et al.].
250 $a 2nd ed.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2017.
300 $a ix, 495 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Topics in applied physics, $x 0303-4216 ; $v v.133
505 0 $a Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides -- Ultra-Efficient Solid-State Lighting -- LEDs Based on Heteroepitaxial GaN on Si Substrates -- Epitaxial Growth of GaN on Patterned Sapphire Substrates -- Growth and optical properties of GaN-based non- and semipolar LEDs -- Internal Quantum Efficiency in Light Emitting Diodes -- Internal Quantum Efficiency; Jong-In Shim -- III-Nitride Tunnel Junctions and their Applications -- Green, Yellow and Red LEDs -- AlGaN based deep-ultraviolet light-emitting diodes -- Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs -- Light Extraction of High Efficient Light-Emitting Diodes -- Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs -- Phosphors and white LED packaging -- High voltage LEDs -- Emerging System Level Applications for LED Technology.
520 $a The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.
650 0 $a Light emitting diodes. $3 219601
650 0 $a Nitrides. $3 234923
650 1 4 $a Physics. $3 179414
650 2 4 $a Applied and Technical Physics. $3 489634
650 2 4 $a Microwaves, RF and Optical Engineering. $3 274186
650 2 4 $a Semiconductors. $3 182134
700 1 $a Seong, Tae-Yeon. $3 785921
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
830 0 $a Topics in applied physics ; $v v.123. $3 561413
856 4 0 $u http://dx.doi.org/10.1007/978-981-10-3755-9
950 $a Physics and Astronomy (Springer-11651)