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Fundamentals of ultra-thin-body MOSF...

Fossum, Jerry G., (1943-)

Fundamentals of ultra-thin-body MOSFETs and FinFETs /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Fundamentals of ultra-thin-body MOSFETs and FinFETs /Jerry G. Fossum, Vishal P. Trivedi.
Author:	Fossum, Jerry G.,
Published:	Cambridge ;Cambridge University Press,2013.
Description:	xvi, 210 p. :ill. ;26 cm.
Subject:	Integrated circuitsVery large scale integration.
ISBN:	9781107030411 (hbk.) :

Fundamentals of ultra-thin-body MOSFETs and FinFETs /
Fossum, Jerry G.,1943-

Fundamentals of ultra-thin-body MOSFETs and FinFETs /Jerry G. Fossum, Vishal P. Trivedi. - Cambridge ;Cambridge University Press,2013. - xvi, 210 p. :ill. ;26 cm.

Includes bibliographical references (p. 200-207) and index.

Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.

"Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"--

ISBN: 9781107030411 (hbk.) :NT$1702

LCCN: 2013013370Subjects--Topical Terms:

180020
Integrated circuits
--Very large scale integration.

LC Class. No.: TK7871.99.M44 / F752 2013

Dewey Class. No.: 621.3815/284

Fundamentals of ultra-thin-body MOSFETs and FinFETs /
LDR:01273cam a2200205 a 4500 001 524519
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008 180731s2013 enka b 001 0 eng
010 $a 2013013370
020 $a 9781107030411 (hbk.) : $c NT$1702
035 $a 17692856
040 $a DLC $b eng $c DLC $d DLC
042 $a pcc
050 0 0 $a TK7871.99.M44 $b F752 2013
082 0 0 $a 621.3815/284 $2 23
100 1 $a Fossum, Jerry G., $d 1943- $3 796258
245 1 0 $a Fundamentals of ultra-thin-body MOSFETs and FinFETs / $c Jerry G. Fossum, Vishal P. Trivedi.
260 $a Cambridge ; $a New York : $b Cambridge University Press, $c 2013.
300 $a xvi, 210 p. : $b ill. ; $c 26 cm.
504 $a Includes bibliographical references (p. 200-207) and index.
505 8 $a Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.
520 $a "Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"-- $c Provided by publisher.
650 0 $a Integrated circuits $x Very large scale integration. $3 180020
650 0 $a Metal oxide semiconductor field-effect transistors. $3 221791