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Quaternary capped In(Ga)As/GaAs quan...

Adhikary, Sourav.

Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectorsfrom materials to devices /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectorsby Sourav Adhikary, Subhananda Chakrabarti.
Reminder of title:	from materials to devices /
Author:	Adhikary, Sourav.
other author:	Chakrabarti, Subhananda.
Published:	Singapore :Springer Singapore :2018.
Description:	xiii, 63 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Quantum dots.
Online resource:	http://dx.doi.org/10.1007/978-981-10-5290-3
ISBN:	9789811052903$q(electronic bk.)

Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectorsfrom materials to devices /
Adhikary, Sourav.

Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectorsfrom materials to devices /[electronic resource] :by Sourav Adhikary, Subhananda Chakrabarti. - Singapore :Springer Singapore :2018. - xiii, 63 p. :ill., digital ;24 cm.

Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.

This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

ISBN: 9789811052903$q(electronic bk.)

Standard No.: 10.1007/978-981-10-5290-3doiSubjects--Topical Terms:

204096
Quantum dots.

LC Class. No.: TK7874.88 / .A24 2018

Dewey Class. No.: 621.3815

Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectorsfrom materials to devices /
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245 1 0 $a Quaternary capped In(Ga)As/GaAs quantum dot infrared photodetectors $h [electronic resource] : $b from materials to devices / $c by Sourav Adhikary, Subhananda Chakrabarti.
260 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a xiii, 63 p. : $b ill., digital ; $c 24 cm.
505 0 $a Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.
520 $a This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
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