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Phase change memorydevice physics, r...

Redaelli, Andrea.

Phase change memorydevice physics, reliability and applications /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Phase change memoryedited by Andrea Redaelli.
Reminder of title:	device physics, reliability and applications /
other author:	Redaelli, Andrea.
Published:	Cham :Springer International Publishing :2018.
Description:	xviii, 330 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Phase change memory.
Online resource:	http://dx.doi.org/10.1007/978-3-319-69053-7
ISBN:	9783319690537$q(electronic bk.)

Phase change memorydevice physics, reliability and applications /
Phase change memorydevice physics, reliability and applications /[electronic resource] :edited by Andrea Redaelli. - Cham :Springer International Publishing :2018. - xviii, 330 p. :ill., digital ;24 cm.

Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.

This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

ISBN: 9783319690537$q(electronic bk.)

Standard No.: 10.1007/978-3-319-69053-7doiSubjects--Topical Terms:

802046
Phase change memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 621.39732

Phase change memorydevice physics, reliability and applications /
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245 0 0 $a Phase change memory $h [electronic resource] : $b device physics, reliability and applications / $c edited by Andrea Redaelli.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2018.
300 $a xviii, 330 p. : $b ill., digital ; $c 24 cm.
505 0 $a Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.
520 $a This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
650 0 $a Phase change memory. $3 802046
650 1 4 $a Materials Science. $3 273697
650 2 4 $a Optical and Electronic Materials. $3 274099
650 2 4 $a Semiconductors. $3 182134
650 2 4 $a Circuits and Systems. $3 274416
650 2 4 $a Computation by Abstract Devices. $3 273703
650 2 4 $a Electronic Circuits and Devices. $3 495609
700 1 $a Redaelli, Andrea. $3 802045
710 2 $a SpringerLink (Online service) $3 273601
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856 4 0 $u http://dx.doi.org/10.1007/978-3-319-69053-7
950 $a Chemistry and Materials Science (Springer-11644)