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Phase change memorydevice physics, r...

Redaelli, Andrea.

Phase change memorydevice physics, reliability and applications /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Phase change memoryedited by Andrea Redaelli.
其他題名:	device physics, reliability and applications /
其他作者:	Redaelli, Andrea.
出版者:	Cham :Springer International Publishing :2018.
面頁冊數:	xviii, 330 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Phase change memory.
電子資源:	http://dx.doi.org/10.1007/978-3-319-69053-7
ISBN:	9783319690537$q(electronic bk.)

Phase change memorydevice physics, reliability and applications /
Phase change memorydevice physics, reliability and applications /[electronic resource] :edited by Andrea Redaelli. - Cham :Springer International Publishing :2018. - xviii, 330 p. :ill., digital ;24 cm.

Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.

This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

ISBN: 9783319690537$q(electronic bk.)

Standard No.: 10.1007/978-3-319-69053-7doiSubjects--Topical Terms:

802046
Phase change memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 621.39732

Phase change memorydevice physics, reliability and applications /
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505 0 $a Chapter 1. Memory overview and PCM introduction -- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides -- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys -- Chapter 4.Self-consistent numerical model -- Chapter 5.PCM main reliability features -- Chapter 6.Structure and properties of chalcogenide materials for PCM -- Chapter 7.Material Engineering for PCM Device Optimization -- Chapter 8.PCM scaling -- Chapter 9.PCM device design -- Chapter 10.PCM array architecture and management -- Chapter 11. PCM applications and an outlook to the future.
520 $a This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
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