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Semiconductor power devicesphysics, ...

Lutz, Josef.

Semiconductor power devicesphysics, characteristics, reliability /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Semiconductor power devicesby Josef Lutz ... [et al.].
Reminder of title:	physics, characteristics, reliability /
other author:	Lutz, Josef.
Published:	Cham :Springer International Publishing :2018.
Description:	xix, 714 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Power semiconductors.
Online resource:	http://dx.doi.org/10.1007/978-3-319-70917-8
ISBN:	9783319709178$q(electronic bk.)

Semiconductor power devicesphysics, characteristics, reliability /
Semiconductor power devicesphysics, characteristics, reliability /[electronic resource] :by Josef Lutz ... [et al.]. - 2nd ed. - Cham :Springer International Publishing :2018. - xix, 714 p. :ill., digital ;24 cm.

Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

ISBN: 9783319709178$q(electronic bk.)

Standard No.: 10.1007/978-3-319-70917-8doiSubjects--Topical Terms:

197819
Power semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

Semiconductor power devicesphysics, characteristics, reliability /
LDR:02424nmm a2200325 a 4500 001 531816
003 DE-He213
005 20180216162045.0
006 m d
007 cr nn 008maaau
008 181113s2018 gw s 0 eng d
020 $a 9783319709178$q(electronic bk.)
020 $a 9783319709161$q(paper)
024 7 $a 10.1007/978-3-319-70917-8 $2 doi
035 $a 978-3-319-70917-8
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.85
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
082 0 4 $a 621.38152 $2 23
090 $a TK7871.85 $b .S471 2018
245 0 0 $a Semiconductor power devices $h [electronic resource] : $b physics, characteristics, reliability / $c by Josef Lutz ... [et al.].
250 $a 2nd ed.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2018.
300 $a xix, 714 p. : $b ill., digital ; $c 24 cm.
505 0 $a Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
520 $a This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
650 0 $a Power semiconductors. $3 197819
650 1 4 $a Engineering. $3 210888
650 2 4 $a Circuits and Systems. $3 274416
650 2 4 $a Power Electronics, Electrical Machines and Networks. $3 338660
650 2 4 $a Energy Systems. $3 512090
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
700 1 $a Lutz, Josef. $3 510698
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-70917-8
950 $a Engineering (Springer-11647)